| PART |
Description |
Maker |
| ST1200 ST1200-D10 ST1200-B5 |
MEMORY CARD IC, 256 bit OTP EPROM WITH LOCK-OUT
Memory Card IC 256 bit OTP EPROM with Lock-Out
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| 24AA1603 24LC16B 24AA16-I/MS 24AA16-I/MSG 24AA16-I |
16K I2C垄芒 Serial EEPROM
16K I2C?/a> Serial EEPROM
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C™ compatible 2-wire serial interface bus. The 24LC16B features hardware write protect, Schmitt trigger in
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C™ ...
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I<SUP>2</SUP>C™ ...
16K I2C Serial EEPROM
|
Microchip Technology Inc.
|
| M27V256 M27V256-100B1TR M27V256-100B6TR M27V256-10 |
NND - 256 KBIT (32KB X8) LOW VOLTAGE UV EPROM AND OTP EPROM
2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM
256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
256 Kbit (32Kb x 8) Low Voltage UV EPROM and OTP EPROM
From old datasheet system
2.5-V/3.3-V 16-Bit Edge-Triggered D-Type Flip-Flops With 3-State Outputs 48-SSOP -40 to 85
2.5-V/3.3-V 16-Bit Edge-Triggered D-Type Flip-Flops With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85
2.5-V/3.3-V 16-Bit Transparent D-Type Latches With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85
2.5-V/3.3-V 18-Bit Universal Bus Transceiver With 3-State Outputs 56-SSOP -40 to 85
2.5-V/3.3-V 16-Bit Edge-Triggered D-Type Flip-Flops With 3-State Outputs 48-TSSOP -40 to 85 256千位2KB × 8低压紫外线可擦写可编程只读存储器和OTP存储
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| ST14C02C |
Memory Card IC 2 Kbit 256 x 8 Serial I2C Bus EEPROM
|
ST Microelectronics
|
| AT43101 |
PCMCIA Card Memory Interface Circuit with 256 Bytes of Internal Attribute Memory EEPROM
|
ATMEL[ATMEL Corporation]
Atmel Corp.
|
| P1753-20GMB P1753-20PGMB P1753-30GMB P1753-30PGMB |
SINGLE CHIP, 40MHz CMOS MMU/COMBO 16-BIT, 256 PAGES, MEMORY MANAGEMENT UNIT, CDSO64
SINGLE CHIP, 40MHz CMOS MMU/COMBO 16-BIT, 256 PAGES, MEMORY MANAGEMENT UNIT, CPGA68
SINGLE CHIP, 40MHz CMOS MMU/COMBO 16-BIT, 256 PAGES, MEMORY MANAGEMENT UNIT, CQFP68
SINGLE CHIP, 40MHz CMOS MMU/COMBO 16-BIT, 256 PAGES, MEMORY MANAGEMENT UNIT, DIP64
16-BIT, 256 PAGES, MEMORY MANAGEMENT UNIT, CDIP64
|
Pyramid Semiconductor, Corp.
PERFORMANCE SEMICONDUCTOR CORP
|
| AM29LV200B AM29LV200BB-120EC AM29LV200BB-120ECB AM |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 80 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 128K X 16 FLASH 3V PROM, 90 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2兆位256Kx8Bit/128Kx16位）.0伏的CMOS引导扇区闪存
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2兆位56Kx8Bit/128Kx16位）.0伏的CMOS引导扇区闪存
|
http://
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| S87C652-4 S87C652-5 S87C654-4 S87C654-5 S87C654-7 |
80C51 8-bit microcontroller 8K/16K 256 OTP I2C
80C51 8-bit microcontroller 8K/16K, 256 OTP, I2C
|
PHILIPS[Philips Semiconductors]
|
| AM28F020 AM28F021 AM28F020-120EC AM28F020-120EE AM |
3 Megabit (256 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory(509.20 k)
Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Male; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Female; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| EN29GL256H EN29GL256H-90ZIP EN29GL256L-90BAIP EN29 |
256 Megabit (32768K x 8-bit / 16384K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
|
Eon Silicon Solution Inc.
|
| AM41PDS3224D |
32 Mbit (2 M x 16-Bit) CMOS 1.8 Volt-only. Simultaneous Operation Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM (Preliminary) 32兆位米16位）的CMOS电压1.8只。同时采取行动，页面模式闪存兆位12x 8-Bit/256x 16位），静态存储器（初步）
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
Advanced Micro Devices
|
