| PART |
Description |
Maker |
| BUL58B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
|
| BUL54BFI |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
| BUL56A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
|
| BUL53A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
|
| BUL66B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
SemeLAB
|
| BUL72A |
Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Six-Sided Shield; No Derating to 63C; Standard 2 x 1 Package
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| BUL54AFI BUL52BFI |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 4 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| PM5543 |
SONET/ SDH 155Mbi t/s ADM Refer ence Desi gn
|
PMC-Serria
|
| XD1004-BD-EV1 XD1004-BD-000V |
10.0-40.0 GHz GaAs MMIC Distributed Amplifier 10000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
10.0-40.0 GHz GaAs MMIC Distributed Amplifier 10.0-40.0千兆赫的GaAs MMIC分布式放大器
|
Mimix Broadband, Inc.
|
| TMPN3120FE3MG |
Neuron? Chip for Distributed Intelligent Control Networks (LONWORKS)
Neuron㈢ Chip for Distributed Intelligent Control Networks (LONWORKS)
|
TOSHIBA[Toshiba Semiconductor]
|
| IT8673F |
Advanced Input / Output (Advanced I/O) Preliminary Specification V0.5
|
N.A.
ETC
|
| AP01L60AT10 |
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness effectiveness
|
Advanced Power Electronics Corp.
|
