| PART |
Description |
Maker |
| APT6040 APT6040BN APT6045BN |
POWER MOS IV 600V 18.0A 0.40 Ohm / 600V 17.0A 0.45 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| APT6045SVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 600V 15A 0.450 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT6035SVR APT10088HVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 600V 18A 0.350 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT6035BVR |
POWER MOS V 600V 18A 0.350 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6017B2LL APT6017LLL |
POWER MOS 7 600V 35A 0.170 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
| APT60M60JFLL |
POWER MOS 7 600V 70A 0.060 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
| APT6013B2LL APT6013LLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS V 600V 43A 0.130 Ohm
|
Advanced Power Technology
|
| NP109N04PUJ NP109N04PUJ-E1B-AY NP109N04PUJ-E2B-AY |
MOS FIELD EFFECT TRANSISTOR
110 A, 40 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZP, TO-263, 3 PIN
SWITCHING N-CHANNEL POWER MOS FET
|
Renesas Electronics Corporation
|
| APL602B2 APL602L |
LINEAR MOSFET 600V 49A 0.125?/a>
LINEAR MOSFET 600V 49A 0.125з
|
Advanced Power Technology
|
| APT60M80L2VR |
POWER MOS V 600V 65A 0.080 Ohm
|
Advanced Power Technology
|
| APT10050B2VFR APT10050LVFR |
21 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V 1000V 21A 0.500 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology Ltd.
|
