PART |
Description |
Maker |
ISPLSI2032VE ISPLSI2032VE-110LB49 ISPLSI2032VE-110 |
225 MHz 3.3V in-system prommable superFAST high density PLD 3.3V In-System Programmable High Density SuperFAST?/a> PLD 3.3V In-System Programmable High Density SuperFAST?/a> PLD 3.3V In-System Programmable High Density SuperFAST⑩ PLD 3.3V In-System Programmable High Density SuperFAST PLD IC,Normally-Open Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.4 IC,Normally-Open Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.3 IC,Normally-Closed Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.4 EE PLD, 13 ns, PQCC44 3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 13 ns, PQFP44 3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 6 ns, PQCC44 3.3V In-System Programmable High Density SuperFASTPLD 3.3在系统可编程高密度PLD的超快⑩ 3.3VIn-SystemProgrammableHighDensitySuperFASTPLD
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LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
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STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(N沟道增强模式高密度功率MOS晶体管) N沟道增强模式“超高密度”功率MOS晶体管(不适用沟道增强模式高密度功率马鞍山晶体管) N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR From old datasheet system N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
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STMicroelectronics N.V. ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
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LTV8192M LTV-819-1S-TA LTV829S-V LTV-829S-TA LTV82 |
High Density Mounting Type Photocoupler 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER High Density Mounting Type Photocoupler 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER High Density Mounting Type Photocoupler(762.22 k) 高密度安装类型光电耦合62.22十一
|
Lite-On Technology, Corp.
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STP40N03L-20 4886 |
From old datasheet system N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY POWER MOS TRANSISTOR
|
ST Microelectronics STMicroelectronics
|
ISPLSI1024 ISPLSI1024EA-200LT100 1024EA ISPLSI1024 |
200 MHz in-system prommable high density PLD Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:28; No. Strands x Strand Size:7 x 36; Jacket Material:Polyethylene; Number of Pairs:4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes In-System Programmable High Density PLD 100 MHz in-system prommable high density PLD
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Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor] http://
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PM4332 |
HIGH DENSITY 32 CHANNEL T1/E1/J1 FRAMER
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PMC[PMC-Sierra, Inc]
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WP06R WP06R12D05 WP06R12D12 WP06R12D15 WP06R12S05 |
High Density 5-6 Watt Wide Input Range DC/DC Converter 5-6 WATT HIGH DENSITY, WIDE INPUT RANGE DC/DC CONVERTER 5-6 WATT HIGH DENSITY/ WIDE INPUT RANGE DC/DC CONVERTER RECTIFIER SCHOTTKY SINGLE 2A 40V 50A-Ifsm 0.55Vf 0.5A-IR PowerDI-123 3K/REEL
|
CANDD[C&D Technologies]
|
ILD1 ILD1-SM IL2 ILD74 ILD2 IL74 |
2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER HIGH DENSITY PHOTOTRANSISTOR OPTICALLY
|
ISOCOM COMPONENTS LTD
|
PM8312TEMUX32 PM8312 |
High-Density 32-Channel T1/E1/J1 Framer with Integrated VT/TU Mapper & M13 Multiplexer
|
PMC-Sierra, Inc
|
WNM2024 WNM2024-3TR |
Single N-Channel, 20V, 3.9A, Power MOSFET Supper high density cell design N-Channel MOSFET
|
TY Semiconductor Co., L...
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