| PART |
Description |
Maker |
| LTC1536 LTC1536C LTC1536CMS8 LTC1536CS8 LTC1536I L |
Advanced LinEPIC Self-Calibrating (Self-Cal) Precision Single Operational Amplifier 8-SOIC
Precision Triple Supply Monitor for PCI Applications
|
Linear Technology Corporation
LINER[Linear Technology]
|
| K4S643232C-TC/L80 K4S643232C-TC/L10 K4S643232C-TC/ |
ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70%
Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC 200万32内存12k × 32 × 4银行同步DRAM LVTTL
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125 200万32内存12k × 32 × 4银行同步DRAM LVTTL
ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70%
Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-PDIP -40 to 85
Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC -40 to 85
Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| ISL28127MSOPEVAL1Z ISL28227SOICEVAL2Z ISL281271012 |
Precision Single and Dual Low Noise Operational Amplifiers
|
Intersil Corporation
|
| ISL28107FUZ ISL28107FUZ-T13 ISL28107SOICEVAL1Z ISL |
Precision Single and Dual Low Noise Operational Amplifiers
|
http://
Intersil Corporation
|
| ISL28207SOICEVAL2Z |
Precision Single, Dual and Quad Low Noise Operational Amplifiers
|
Intersil Corporation
|
| OP-37AJ OP-37AZ OP-37BJ OP-37BZ OP-37CJ OP-37CZ OP |
LOW NOISE, PRECISION, HIGH SPEED OPERATIONAL AMPLIFIER(AVCL>=5)
703.02 Kbytes
LOW NOISE, PRECISION, HIGH SPEED OPERATIONAL AMPLIFIER(AVCL>=5)
LOW NOISE, PRECISION, HIGH SPEED OPERATIONAL AMPLIFIER(AVCL>=5) OP-AMP, 200 uV OFFSET-MAX, 63 MHz BAND WIDTH, CQCC20
|
AD[Analog Devices]
Analog Devices, Inc.
|
| CA3193 CA3193AE CA3193E |
1.2MHz, BiCMOS Precision Operational Amplifiers OP-AMP, 380 uV OFFSET-MAX, 1.2 MHz BAND WIDTH, PDIP8
1.2MHz, BiCMOS Precision
Operational Amplifiers
|
Intersil, Corp.
Intersil Corporation
|
| K4S64323LF-DG_S15 K4S64323LF-DG_S1H K4S64323LF-DG_ |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-SOIC -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP -55 to 125
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| 5962F0254201QXC 5962F0254201VXC ISL7124SRH ISL7124 |
Operational Amplifier 运算放大
Single-Event Hardened, Single Supply, Quad Operational Amplifier
Operational Amplifier, Single-Event Rad-Hard, Single Supply, Quad, 0.3V/s Slew Rate
Single-Event Hardened/ Single Supply/ Quad Operational Amplifier
1.0 Amp Power Operational Amplifier
|
Brady, Corp.
Intersil Corporation
|
| K4S641632E-TC1H K4S641632E-TC1L K4S641632E-TC50 K4 |
4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125
64Mbit SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
