| PART |
Description |
Maker |
| BS829 |
DMOS Transistors (P-Channel)(P???DMOS?朵?绠?
|
GE Security, Inc.
GE[General Semiconductor]
|
| 2N7000 |
DMOS Transistors (N-Channel)
|
http://
GE[General Semiconductor]
|
| BS809 |
DMOS Transistors (N-Channel)(N通道DMOS晶体 DMOS晶体管（N沟道）（不适用通道的DMOS晶体管）
|
General Semiconductor
GE Security, Inc.
|
| ACE632 |
The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
ACE Technology Co., LTD.
|
| STN4488L |
STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
|
Stanson Technology
|
| STP4403 |
STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN9926AA |
The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
|
Stanson Technology
|
| ZVN0120L ZVN0120 ZVN0120A ZVN0120B |
BV(dss): 200V; I(d): 0.16A; R(ds): 16 Ohm; N-channel enhancement-mode vertical DMOS FET
N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
|
ZETEX[Zetex Semiconductors]
|
| ZVN2110A |
N-channel MOSFET
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
|
ZETEX[Zetex Semiconductors]
|
| ZVNL110G |
N-channel MOSFET
SOT223 N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET
|
Zetex Semiconductors
Diodes Incorporated
|
| SSD5501 XSD5501 |
N-Channel Depletion-Mode 4-Channel DMOS FET Array
|
CALOGIC[Calogic, LLC]
|
