| PART |
Description |
Maker |
| NJM12904 NJM12904D NJM12904E NJM12904L NJM12904M N |
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz / 200s Pulse / 10 Duty
Radar Pulsed Power Amplifier-190 Watts 2.7-3.1GHz,200ms Pulse,10% Duty
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200s Pulse, 10 Duty
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200レs Pulse, 10 Duty 雷达脉冲功率Amplifier.190.7.3.1千兆赫，200レ拧脉冲10职务
|
MA-Com
MACOM[Tyco Electronics]
Analog Devices, Inc.
|
| PTB20080 |
25 Watts, 1.6-1.7GHz RF Power Transistor
25 Watts, 1.6-1.7 GHz RF Power Transistor
25 Watts 1.6-1.7 GHz RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| UTV120 UTV200 |
12 Watts, 26.5 Volts, Class A UHF Television - Band IV & V
COMMON EMITTER transistor 20 Watts, 26.5 Volts, Class A UHF Television - Band IV & V
|
GHZTECH[GHz Technology]
|
| C100N50Z4 |
Surface Mount Termination 100 Watts, 50楼?
Surface Mount Termination 100 Watts, 50Ω
|
Anaren Microwave
|
| PTF10133 |
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 85瓦，860-960兆赫GOLDMOS场效应晶体管
85 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| PTB20145 |
9 Watts, 91560 MHz Cellular Radio RF Power Transistor
9 Watts, 915-960 MHz Cellular Radio RF Power Transistor 9瓦，915-960兆赫蜂窝无线电射频功率晶体管
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PTF10031 |
50 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 50瓦，1.0 GHzGOLDMOS场效应晶体管
|
Ericsson Microelectronics
|
| HPS12S-NNR004 HPS10 HPS10Q-N3N000 HPS10Q-N3N001 HP |
1000-6000 Watts HPS10/12/15 Series
1000-6000 Watts HPS10/12/15 Series
|
Emerson Network Power
ASTEC[Astec America, Inc]
http://
|
| PTF10137 |
12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 12瓦，1.0 GHz的GOLDMOS场效应晶体管
12 Watts 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
