PART |
Description |
Maker |
SS494B-SP SS494B-T3 SS494B-T2 |
MINIA TURE RATIOMETRIC LINEAR HALL EFFECT SENSOR
|
Honeywell Solid State Electronics Center
|
TC1046 EMC1001 MCP6041-I-SN EMC2112 TC74 TC621 TC6 |
Analog & Interface Product Selector Guide Analog and Interface Product Selector Guide Thermal Management ?Motor Driver ?Interface Peripherals Power Management ?Linear & Mixed Signal ?Safety & Security Analog and Interface Product Selector Guide Analog & Interface Product Selector Guide
|
Microchip Technology
|
DBU-25P-K87-F0 |
Brand: Cannon Product Category: D Sub Product Line: D Sub Series: D*U
|
ITT Industries
|
TMP86C847 TMP86C846 TMP86CH46 TMP86CH47 TMP86CK74 |
The product information available by this search method contains an overview of each product only.
|
TOSHIBA
|
BCR10CS-12LA BCR10CS-12LA-T11 |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150掳C) Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C)
|
Renesas Electronics Corporation
|
BCR8CS-12LB BCR8CS-12LB-T11 |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C) Triac Medium Power Use (The product guaranteed maximum junction temperature of 150隆?C)
|
Renesas Electronics Corporation
|
OSPAYG5 |
PRODUCT SPECIFICATION FOR LED Power Supply
|
OptoSupply International
|
LTA6SG-V1AB-36 LBA6SG-S1T2-35 LBA6SG LTA6SG |
Hyper SIDELED? long life Enhanced optical Power LED (ThinGaN?) Lead (Pb) Free Product - RoHS Compliant Hyper SIDELED㈢ long life Enhanced optical Power LED (ThinGaN㈢) Lead (Pb) Free Product - RoHS Compliant
|
OSRAM GmbH
|
STP60N05-14 STP60N06-14 4893 P60N05 |
From old datasheet system N-CHANNEL Power MOSFET N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
|
STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
IPB16CN10NG IPD16CN10NG IPI16CN10NG IPP16CN10N IPP |
OptiMOS?2 Power-Transistor Excellent gate charge x RDS(on) product (FOM) OptiMOS㈢2 Power-Transistor
|
Infineon Technologies AG
|
IPP028N08N3G IPI028N08N3G |
OptiMOS庐3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
|
Infineon Technologies AG
|
BCR30AM-12LB-15 |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150?C)
|
Renesas Electronics Corporation
|