PART |
Description |
Maker |
MN102L360C |
Microcomputer - 16bit - General Purpose From old datasheet system
|
Panasonic
|
MN102H60G MN102HF60G MN102H60 MN102H60K MN102HF60 |
Microcomputer - 16bit - General Purpose Microcomputers/Controllers MN102H60G , MN102H60K
|
PANASONIC[Panasonic Semiconductor] http://
|
MN102H76G |
Microcomputer - 16bit - General Purpose From old datasheet system QFP084-P-1818E(Pb Free)
|
panasonic
|
MN102H85K |
Microcomputer - 16bit - General Purpose 83 ns (at 3.0 V to 3.6 V 12 MHz) 83 ns (at 3.0 V to 3.6 V, 12 MHz) From old datasheet system
|
PANASONIC[Panasonic Semiconductor]
|
AK4641EN |
16bit stereo CODEC with built-in Microphone-amplifier and 16bit Mono CODEC for Bluetooth Interface.
|
Asahi Kasei Microsystems
|
M38223M4M-145HP M38223M4-182FP M38223M4-183FP M382 |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 3822 Series Microcontrollers: On-Chip Segment LCD Drivers with A-D Converters RAM size: 192 bytes; single-chip 8-bit CMOS microcomputer RAM size: 256 bytes; single-chip 8-bit CMOS microcomputer RAM size: 384 bytes; single-chip 8-bit CMOS microcomputer RAM size: 512 bytes; single-chip 8-bit CMOS microcomputer RAM size: 640 bytes; single-chip 8-bit CMOS microcomputer RAM size: 768 bytes; single-chip 8-bit CMOS microcomputer RAM size: 896 bytes; single-chip 8-bit CMOS microcomputer RAM size: 1024 bytes; single-chip 8-bit CMOS microcomputer
|
Mitsubishi Electric Corporation
|
A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316A |
Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM
|
AMIC Technology
|
UPD750008 UPD750008CUA-XXX UPD750008CU-XXX UPD7500 |
75XL series 4B-pin microcomputer on-chip ROM (8Kx8) & RAM(512x4) 4-bit single-chip microcomputer
|
NEC
|
KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|