| PART |
Description |
Maker |
| 27C4100 27C4096 MX27C4096 MX27C4096PI-12 MX27C4096 |
(MX27C4100 / MX27C4096) 4M-BIT [512K x 8/256K x 16] CMOS EPROM
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 120 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 100 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDSO40
Single Output LDO, 50mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 256K X 16 OTPROM, 100 ns, PDIP40
|
Macronix International Co., Ltd.
|
| IDT71V416YS15YGI IDT71V416YS IDT71V416YL10BEG IDT7 |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位）
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| MCM6229A-45 MCM6229AWJ20R2 |
256K X 4 BIT STATIC RANDOM ACCESS MEMORY 256K X 4 STANDARD SRAM, 20 ns, PDSO28
|
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| KM641001A |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| LP62S2048A-I LP62S2048AM-55LLI LP62S2048AM-70LLI L |
256K X 8 BIT LOW VOLTAGE CMOS SRAM 256K × 8位低电压CMOS的SRAM
ER 22C 18#16 4#12 SKT PLUG
|
AMIC Technology, Corp.
AMIC Technology Corporation
AMICC[AMIC Technology]
|
| MCM6929A MCM6929AWJ10 MCM6929AWJ10R MCM6929AWJ12 M |
256K x 4 Bit Fast Static Random Access Memory 256K X 4 STANDARD SRAM, 10 ns, PDSO32
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
MOTOROLA INC
|
| MB814260-70 MB814260-60 |
CMOS 256K ×16 BIT
FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速页面存取模式动态RAM)
CMOS 256K ×16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速页面存取模式动态RAM) 的CMOS 256K × 16位快速页面模式的动态随机存储器（的CMOS 256K × 16位快速页面存取模式动态内存）
CMOS 256K ?16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ?16 浣?揩??〉?㈠???ā寮????AM)
|
Fujitsu Limited
Fujitsu, Ltd.
|
| K6R1004C1D K6R1004C1D-JC12 |
256K X 4 STANDARD SRAM, 12 ns, PDSO32
256K x 4 Bit (with /OE) High-Speed CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| MBM29F200BA12 MBM29F200TA12 |
2M (256K×8/128K×16) Bit Flash Memory(V 电源电压256K×8/128K×16闪速存储器) 200万（256K × 8/128K × 16）位快闪记忆体（V的电源电56K × 8/128K × 16闪速存储器
2M (256K?8/128K?16) Bit Flash Memory(??V ?垫??靛?256K?8/128K?16???瀛???ī
|
Fujitsu, Ltd.
Fujitsu Limited
|
| NM27C020 NM27C020QE150 |
2 Meg (256k x 8) UV Erasable CMOS EPROM [Life-time buy]
2097152-Bit (256K x 8) UV Erasable CMOS EPROM
2,097,152-Bit (256K x 8) UV Erasable CMOS EPROM
2 /097 /152-Bit (256K x 8) UV Erasable CMOS EPROM
|
FAIRCHILD[Fairchild Semiconductor]
|
| MBM29LV002TC-70PNS MBM29LV002TC-90PTN MBM29LV002TC |
2M (256K x 8) BIT 256K X 8 FLASH 3V PROM, 90 ns, PDSO40
2M (256K x 8) BIT 256K X 8 FLASH 3V PROM, 120 ns, PDSO40
2M (256K x 8) BIT 256K X 8 FLASH 3V PROM, 70 ns, PDSO40
|
Fujitsu, Ltd.
http://
Fujitsu Component Limited.
Fujitsu Component Limit...
|
