| PART |
Description |
Maker |
| BAT15-099R BAT1599R Q62702-A0043 |
RES CHIP 1K QW 5% SILICON, LOW BARRIER SCHOTTKY, MIXER DIODE
Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers/ phase detectors and modulators)
Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers, phase detectors and modulators)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BAT74S |
Schottky Barrier Double Diode
|
Guangdong Kexin Industrial Co.,Ltd
|
| BAT74S_03 BAT74S03 |
Schottky barrier double diode
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PMBD353 PMBD353-15 |
Schottky barrier double diode
|
NXP Semiconductors
|
| LBAS40LT1 LBAS40-04LT1 LBAS40-05LT1 LBAS40-06LT1 |
SCHOTTKY BARRIER (DOUBLE) DIODE 肖特基（双重）二极管
|
Leshan Radio Company, Ltd.
LRC[Leshan Radio Company]
|
| BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSE |
Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Schottky barrier double diodes
|
NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
|
| Q62702-A0043 |
Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers, phase detectors and modulators)
|
Siemens Semiconductor G...
|
| KDR411 |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW PWER RECTIFICATION, FOR SWITCHING POWER SUPPLY)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
KEC Holdings
|
| BAS70-06 BAS70 BAS70-05 BAS70-04 BAS70-07 |
Schottky Barrier (Double) Diodes(肖特基势垒（双）二极
Schottky barrier double diodes
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| KDR701S |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(FOR HIGH FREQUENCY RECTIFICATION)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KDR378E |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
