| PART |
Description |
Maker |
| ADP3401 ADP3401ARU |
GSM Power Management System
|
AD[Analog Devices]
|
| AT73C202 |
Power Management for Mobiles (PM) 2-CHANNEL POWER SUPPLY SUPPORT CKT, PBGA49
The AT73C202 is a low-cost, ultra low-power, power and battery management IC designed to interface directly with state-of-the-art cellular phones, for example with 2.5G GSM phones. It includes all required power supplies tailored to be ful
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| MB3891 MB3891PFV |
Power Management IC for GSM Mobile Phone
|
Fujitsu Limited
Fujitsu Component Limited.
|
| ADP3401 ADP3401ARU ADP3401-15 |
2nd Level Over Voltage Protection for 2, 3, or 4 Cell LiIon & LiPoly Batteries (2nd Lev Protection) 8-TSSOP -25 to 85 手机电源管理系统
2nd Level Over Voltage Protection for 2, 3, or 4 Cell LiIon & LiPoly Batteries (2nd Lev Protection) 8-TSSOP -25 to 85 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO28
2nd Level Over Voltage Protection for 2, 3, or 4 Cell LiIon & LiPoly Batteries (2nd Lev Protection) 8-TSSOP -25 to 85
GSM Power Management System for use with AD20msp425
GSM Power Management System
|
Analog Devices, Inc.
|
| MRF18030A |
MRF18030AR3, MRF18030ASR3 GSM/GSM EDGE 1.8 - 1.88 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| MRF5S9101NBR1 MRF5S9101NR1 |
GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
|
Freescale Semiconductor
|
| MRF18085AR3 MRF18085ALSR3 |
RF Power Field Effect Transistors
GSM/GSM EDGE 1.80–1.88 GHz, 85 W, 26 V Lateral N–Channel RF Power MOSFET
|
Motorola, Inc.
MOTOROLA[Motorola Inc]
Freescale (Motorola)
|
| MRF18030BLSR3 MRF18030BSR3 MRF18030BR3 MRF18030BLR |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| MRF18030ASR3 MRF18030ALSR3 MRF18030ALR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| TST0922 |
SiGe-Power Amplifier for GSM 900 (Flipchip Version)
From old datasheet system
|
Atmel
|
| MRF18030BR3 MRF18030BSR3 MRF1803BR3 MRF1803BSR3 MR |
MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS
|
Motorola, Inc
|
