| PART |
Description |
Maker |
| TLE4927C |
Dynamic Differential Hall Effect Sensor
|
Infineon Technologies AG
|
| TLE4923 |
Dynamic Differential Hall Effect Sensor ic
|
INFINEON[Infineon Technologies AG]
|
| HYB3118165BST-50 HYB5118165BST-50 HYB3118165BSJ-60 |
High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16-Bit Dynamic RAM 1k Refresh 100万16位动态随机存储器经销商刷
1M×16-Bit Dynamic RAM(1M×16动态RAM(快速页面模)
1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16动RAM)
|
Siemens Semiconductor Group
SIEMENS AG
|
| TLE4921-3U |
Differential Hall IC TLE 4921-3U
|
Infineon Technologies AG
|
| ACS706ELC-20A |
Bidirectional 1.5 mΩ Hall Effect Based Linear Current Sensor with Voltage Isolation and 20 A Dynamic Range
|
Allegro MicroSystems
|
| ACS706ELC-20A |
Bidirectional 1.5 mヘ Hall Effect Based Linear Current Sensor with Voltage Isolation and 20 A Dynamic Range
|
ALLEGRO[Allegro MicroSystems]
|
| TLE4953C |
Differential Two-Wire Hall Effect Sensor IC
|
Infineon Technologies AG
|
| TLE4942-2C TLE4942-2 |
DIFFERENTIAL TWO-WIRE HALL EFFECT SENSOR IC
|
INFINEON[Infineon Technologies AG]
|
| UGN-3501LI UGN-3501K |
LINEAR DIFFERENTIAL OUTPUT HALL EFFCT SENSORS
|
http://
List of Unclassifed Manufacturers
ETC
|
| HYB3165160ATL-60 HYB3165160AT-60 HYB3164160AT-40 H |
4M x 16-Bit Dynamic RAM
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70
4M x 16-Bit Dynamic RAM 4M X 16 FAST PAGE DRAM, 50 ns, PDSO50
|
Siemens Semiconductor G...
SIEMENS AG
Siemens Semiconductor Group
|
| ADL5565 ADL5565-EVALZ ADL5565ACPZ-R7 |
6 GHz Ultrahigh Dynamic Range Differential Amplifier
|
Analog Devices
|
| A142105 A1423LK-T A1421 A1421LK-T A1422 A1422LK-T |
High Precision Hall Effect AC-Coupled Differential Sensor with Integrated Filter Capacitor
|
ALLEGRO[Allegro MicroSystems]
|
