| PART |
Description |
Maker |
| GE28F256L30T110 GE28F128L30B110 |
1.8 Volt Intel StrataFlash Wireless Memory with 3.0-Volt I/O (L30) 16M X 16 FLASH 1.8V PROM, 88 ns, PBGA79
1.8 Volt Intel StrataFlash Wireless Memory with 3.0-Volt I/O (L30) 8M X 16 FLASH 1.8V PROM, 88 ns, PBGA56
|
Intel, Corp.
|
| 28F3204W30 RD28F6408W30T85 28F320W30 28F6408W30 28 |
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
|
INTEL[Intel Corporation]
|
| RC28F128J3A-150 E28F128J3A-150 |
3 Volt Intel StrataFlash Memory 3伏特英特尔StrataFlash存储
3 Volt Intel StrataFlash Memory 8M X 16 FLASH 2.7V PROM, 150 ns, PDSO56
|
Intel, Corp.
http://
|
| GE28F640W18 |
Wireless Flash Memory
|
Intel Corporation
|
| 290702-13 |
Numonyx Wireless Flash Memory (W30)
|
Numonyx B.V
|
| CAT28F010 CAT28F010TI-70T CAT28F010PI-70T CAT28F01 |
120ns 2M-bit CMOS flash memory
90ns 2M-bit CMOS flash memory
70ns 2M-bit CMOS flash memory
1 Megabit CMOS Flash Memory
High Speed CMOS Logic 8-Stage Shift-and-Store Bus Register with 3-Stage Outputs 16-PDIP -55 to 125
|
http://
CATALYST[Catalyst Semiconductor]
|
| GE28F256L18B85 GE28F256L18T85 GE28F128L18T85 PH28F |
1.8V, 85ns, 256Mbit StrataFlash Wireless Memory
1.8V, 85ns, 128Mbit StrataFlash Wireless Memory
1.8V, 85ns, 128Mbit lead-free StrataFlash Wireless Memory
|
Intel
|
| 28F640J3A 28F128J3A 28F320J3A |
3 Volt Intel StrataFlash Memory(3 V 64M位英特尔StrataFlash存储
3 Volt Intel StrataFlash Memory(3 V 128M位Strata闪速存储器)
3 Volt Intel StrataFlash Memory(3 V 32M位英特尔StrataFlash存储
|
Intel Corp.
|
| CAT28F020_04 CAT28F020 CAT28F020G-12T CAT28F020G-9 |
256K X 8 FLASH 12V PROM, 90 ns, PQCC32
2 Megabit CMOS Flash Memory
Bulk Erase Flash Memory, 2Mb
|
http://
CATALYST[Catalyst Semiconductor]
|
| AM29F080B-75SC |
Flash Memory IC; Memory Size:8Mbit; Memory Configuration:1M x 8; Package/Case:44-SOIC; Supply Voltage:5V; Access Time, Tacc:75ns; Mounting Type:Surface Mount 1M X 8 FLASH 5V PROM, 70 ns, PDSO44
|
Spansion, Inc.
|
| AM29F032B-75 AM29F032B-90EF |
32 Megabit (4 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:32Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes 4M X 8 FLASH 5V PROM, 90 ns, PDSO40
|
Spansion, Inc.
|
