| PART |
Description |
Maker |
| CFY66 CFY66-08 CFY66-08P CFY66-10 CFY66-10P |
HiRel K-Band GaAs Super Low Noise HEMT
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BFY280 BFY280H |
From old datasheet system
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
|
Infineon
Siemens Semiconductor Group
|
| CFY35 Q62702-F1394 CFY35-20 CFY35-23 Q62702-F1393 |
From old datasheet system
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters)
SCREWDRIVER, MULTI BLADE 7PCSCREWDRIVER, MULTI BLADE 7PC; Kit contents:7 Piece Set X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
|
http://
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BXY44P BXY44P-FP Q62702X166 Q62702X165 |
From old datasheet system
HiRel Silicon PIN Diode (HiRel Discrete and Microwave Semiconductor Current controlled RF resistor for RF attenuators and switches)
INSERT, 6 WAY SOCKET
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| TC1202 |
Super Low Noise GaAs FETs
|
Transcom, Inc.
|
| NE76000 NE76000L |
LOW NOISE L TO Ku BAND GaAs MESFET
|
NEC Corp.
NEC[NEC]
|
| CLX30-10 CLX30 CLX30-00 CLX30-05 |
HiRel X-Band GaAs Power-MESFET
Reed Relay; Contacts:SPST; Contact Carry Current:1A; Coil Voltage DC Max:24V; Relay Terminals:Thru Hole; Switching Current Max:0.5A; Switching Voltage Max:200V; Contact Carrying Power:10W; Leaded Process Compatible:Yes RoHS Compliant: Yes
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| FLL2400IU-2C |
L-Band High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Fujitsu Limited
Sumitomo Electric Industries, Ltd.
|
| MGF0910A 0910A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NE70000 NE70083 NE70083-4 |
80 GHz, low noise Ku-K band GaAs MESFET
|
NEC
|
| NE71383B NE71383 |
L to Ku Band Low Noise N-Channel GaAs MESFET
|
California Eastern Labs
NEC[NEC]
|
