| PART |
Description |
Maker |
| BSS84LT1/D BSS84LT1-D |
Power MOSFET 130 mAmps, 50 Volts P-Channel SOT-23
Power MOSFET 130 mAmps50 Volts
|
ON Semiconductor
|
| LMGSF1N02LT1 |
Power MOSFET 750 mAmps, 20 Volts
|
LRC[Leshan Radio Company]
|
| MGSF1N03LT1 MGSF1N03LT3 MGSF1N03LT3G MGSF1N03L MGS |
Power MOSFET 750 mAmps, 30 Volts
Power MOSFET 30 V, 2.1 A, Single N−Channel, SOT−23
From old datasheet system
|
ON Semiconductor
|
| LBSS138LT1G LBSS138LT1 |
Power MOSFET 200 mAmps, 50 Volts N-hannel SOT-3
|
LRC[Leshan Radio Company]
|
| LBSS84WT1G |
Power MOSFET F30 mAmps, 50 Volts P_Channel SOT_323
|
乐山无线电股份有限公
|
| RF1K49154 |
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET?Power MOSFET
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET⑩ Power MOSFET
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFETPower MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| BSS138LT1/D BSS138LT1-D |
Power MOSFET 200 mAmps, 50 Volts N-Channel SOT-23
Transient Voltage Suppressor Diodes
|
ON Semiconductor
|
| IRHYK57133CMSE IRHYK57133CMSEPBF |
20 A, 130 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, TO-257AA, 3 PIN
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-257AA)
|
International Rectifier, Corp.
Integrated Device Technology, Inc.
IRF[International Rectifier]
|
| MRF374A |
MRF374A 470-860 MHz, 130 W, 32 V Lateral N-Channel Broadband RF Power MOSFET
RF POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc
Motorola Inc
|
| SS14T3 |
Power MOSFET 170 mAmps, 100 Volts
|
ON Semiconductor
|
| VN2222LL VN2222LLRLRM VN2222LLG VN2222LLRL VN2222L |
Small Signal MOSFET 150 mAmps, 60 Volts
|
ONSEMI[ON Semiconductor]
|
