PART |
Description |
Maker |
BFY180 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA)
|
Siemens Semiconductor G...
|
BFY180 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA) From old datasheet system
|
SIEMENS AG Siemens Semiconductor Group
|
BFY18211 |
HiRel NPN Silicon RF Transistor
|
Infineon Technologies AG Infineon Technologies A...
|
BFY182S BFY182 BFY182ES BFY182H BFY182P |
HiRel NPN Silicon RF Transistor
|
Infineon Technologies AG
|
Q62702A674 |
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching)
|
Siemens Semiconductor G...
|
BFY405 BFY405ES BFY405H BFY405P BFY405S |
HiRel NPN Silicon RF Transistor
|
Infineon Technologies A... Infineon Technologies AG
|
BAS70-T1 |
HiRel Silicon Schottky Diode
|
Infineon Technologies AG
|
CZT7090L |
SMD Bipolar Power Transistor PNP Low VCE(SAT) SURFACE MOUNT LOW VCE(SAT) PNP SILICON POWER TRANSISTO
|
CENTRAL[Central Semiconductor Corp]
|
UPD23C64040ALGY-XXX-MK UPD23C64040ALGY-XXX-MJ |
HiRel Silicon Diodes; Package: --; Package: -; IF (max): -; VBR (min): -; rF (typ): -; CT (max): - x8 or x16 ROM (Mask Programmable) x8或x16光盘(掩模可编程
|
NEC, Corp.
|