| PART |
Description |
Maker |
| EH3725ETTS-150.000M |
OSCILLATORS 25PPM -40 85 2.5V 4 150.000MHZ TS CMOS 5.0X3.2 4PAD SMD CRYSTAL OSCILLATOR, CLOCK, 150 MHz, LVCMOS OUTPUT
|
Ecliptek, Corp.
|
| EH2725ETTS-150.000M |
OSCILLATORS 25PPM -40 85 2.5V 4 150.000MHZ TS CMOS 7.0X5.0 4PAD SMD CRYSTAL OSCILLATOR, CLOCK, 150 MHz, LVCMOS OUTPUT
|
Ecliptek, Corp.
|
| EH1100TS-150.000M |
OSCILLATORS 100PPM 0 70 5.0V 4 150.000MHZ TS CMOS FULL 14PIN DIP CRYSTAL OSCILLATOR, CLOCK, 150 MHz, HCMOS/TTL OUTPUT
|
Ecliptek, Corp.
|
| RFT3055 RFT3055LE HGTG20N120CND FN4537 |
2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET 2.0安培0V的，0.150 Ohm的N通道，逻辑层次，额定静电，功率MOSFET
2.0A/ 60V/ 0.150 Ohm/ N-Channel/ Logic Level/ ESD Rated/ Power MOSFET
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
2.0A 60V 0.150 Ohm N-Channel Logic Level ESD Rated Power MOSFET
From old datasheet system
|
Fairchild Semiconductor, Corp.
INTERSIL[Intersil Corporation]
|
| MTW26N15E ON2689 |
TMOS POWER FET 26 AMPERES 150 VOLTS RDS(on) = 0.095 OHM 26 A, 150 V, 0.095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
From old datasheet system
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| MTD6N15 MTD6N15T4G |
Power Field Effect Transistor DPAK for Surface Mount(功率场效应晶体管) 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
Power MOSFET 150 V, 6 A, N-Channel DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| BYV32E-150 BYV32E-150127 |
Dual rugged ultrafast rectifier diode, 20 A, 150 V, SOT78 (TO-220AB), Tube pack 20 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB
|
NXP Semiconductors N.V.
|
| IRF230-233 IRF231 IRF232 IRF233 MTP12N18 MTP12N20 |
N-Channel Power MOSFETs, 12A, 150-200 V 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel Power MOSFETs, 12A, 150-200 V N沟道功率MOSFET，第12A50-200 V
(MTP12N18 / MTP12N20) N-Channel Power MOSFETs
N-Channel Power MOSFETs/ 12A/ 150-200 V
N-Channel Power MOSFETs 12A 150-200 V
|
http://
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| M67741H 67741H M67741 |
RF POWER MODULE 150-175MHz, 12.5V, 30W, FM MOBILE RADIO
135-160MHz /12.5V /30W / FM MOBILE RADIO
150-175MHz,12.5V,30W, FM MOBILE RADIO
From old datasheet system
150-175MHz /12.5V /30W / FM MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| LT3689HMSEPBF |
700mA Step-Down Regulator with Power-On Reset and Watchdog Timer; Package: 16-MSOP; Temperature Range: –40°C to 150°C 1.95 A SWITCHING REGULATOR, 2160 kHz SWITCHING FREQ-MAX, PDSO16
|
Linear Technology, Corp.
|
| ME601615 ME601215 |
Three-Phase Diode Bridge Modules (150 Amperes/1200-1600 Volts) 3 PHASE, 150 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| RF1K49224 FN4330 |
3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFETPower MOSFET
3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFET⑩ Power MOSFET
From old datasheet system
3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFET Power MOSFET
3.5A/2.5A/ 30V/ 0.060/0.150 Ohms/ Complementary LittleFET Power MOSFET
|
INTERSIL[Intersil Corporation]
|
|
