| PART |
Description |
Maker |
| UMA9N FMA9 FMA9A FMA9N |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-88A
Digital transistor (Common Emitter Dual Transistors)
|
Rohm CO.,LTD.
Microsemi Corporation
ROHM[Rohm]
|
| 1819AB4 |
4 W, 25 V, 1808-1880 MHz common emitter transistor
|
GHz Technology
|
| AT31625 |
NPN Common Emitter Medium Power Output Transistor
|
Hewlett-Packard
|
| UTV005 |
COMMON EMITTER transistor 0.5 Watt, 20 Volts, Class A UHF Television - Band IV & V
|
GHZTECH[GHz Technology]
|
| AT-33225-BLK AT-33225-TR1 AT-33225 |
4.8 V NPN Common Emitter Output Power Transistor for AMPS/ ETACS Phones
4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones
4.8 V NPN Common Emitter Output Power Transistor for AMPS ETACS Phones
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| TD62504FN TD62502FN TD62503FN E005668 |
From old datasheet system
7ch SINGLE DRIVER : COMMON EMITTER
7ch SINGLE DRIVER(COMMON EMITTER) 7通道单一驱动程序（共发射极）
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Toshiba, Corp.
|
| EMA6DXV5T5 |
(EMA6DXV5T1 / EMA6DXV5T5) Dual Common Emitter Bias Resistor Transistor PNP Silicon Surface Mount Transistors
|
ON Semiconductor
|
| MRF517 |
Small Signal, Up to 1 GHz, Class A, Common Emitter; fO (MHz): 0; fT (MHz): 3000; GNF (dB): 10; VCE (V): 15; IC (mA): 60; NF min (dB): 2.5; Case Style: TO-39 UHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-39
|
Microsemi, Corp.
|
| 10A015 |
1.5 W, 20 V, 1000 MHz common emitter transistor
1.5 Watts, 20 Volts, Class A Linear to 1000 MHz
|
GHZTECH[GHz Technology]
|
| 23A003 |
0.3 W, 15 V, 2300 MHz common emitter transistor
0.3 Watts, 15 Volts, Class A Linear to 2300 MHz
|
GHZTECH[GHz Technology]
|
| 23A005 |
0.5 W, 20 V, 2300 MHz common emitter transistor
0.5 Watts, 20 Volts, Class A Linear to 2300 MHz
|
GHZTECH[GHz Technology]
|
