PART |
Description |
Maker |
RE46C126 |
CMOS Ionization Smoke Detector ASIC with Interconnect
|
Microchip Technology
|
RE46C127 |
CMOS Ionization Smoke Detector ASIC with Interconnect and Timer Mode
|
R & E International, Inc.
|
RE46C152 |
CMOS Ionization Smoke Detector ASIC with Interconnect, Timer Mode and Tone Select
|
Microchip Technology
|
IC62VV1008LL IC62VV1008L IC62VV1008L-100B IC62VV10 |
70ns; 1.8V; 1M x 8 ultra low power CMOS static RAM 1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM ASYNCHRONOUS STATIC RAM, Low Power A.SRAM 100ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM 524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA 512Kx8 bit CMOS static RAM, 100ns, low power 512Kx8 bit CMOS static RAM, 70ns, low power
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
AS6UA25616-TI AS6UA25616 AS6UA25616-BC AS6UA25616- |
2.3V to 3.6V 256K×16 Intelliwatt low-power CMOS SRAM with one chip enable(2.3V 3.6V 256K×16 Intelliwatt 低功CMOS 静态RAM(带单片使能 2.3V to 3.6V 256K16 Intelliwattlow-power CMOS SRAM with one chip enable 2.3V to 3.6V 256K6 Intelliwattlow-power CMOS SRAM with one chip enable 2.3V to 3.6V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable 2.3V to 3.6V 256K16 Intelliwatt low-power CMOS SRAM with one chip enable 2.3V to 3.6V 256K】16 Intelliwatt⑩ low-power CMOS SRAM with one chip enable 2.3V to 3.6V 256K×16 Intelliwatt?/a> low-power CMOS SRAM with one chip enable
|
Alliance Semiconductor Corporation Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
|
KM68V1000BLE_LE-L KM68U1000BLE_LE-L KM68U1000BLG-1 |
CONNECTOR ACCESSORY 连接器附 128K X 8bit Low Power and Low Voltage CMOS Statinc RAM 128K的8位低功耗和低电压的CMOS Statinc内存 (KM68V1000B / KM68U1000B) 128K X 8bit Low Power and Low Voltage CMOS Statinc RAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
N02L63W3AB25I N02L63W3AB5IT N02L63W3A |
2 Mb Ultra-Low Power Asynchronous CMOS SRAM 2 Mb, 3 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tape and Reel; Qty per Container: 2500 128K X 16 STANDARD SRAM, 70 ns, PBGA48 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 16bit
|
ON Semiconductor
|
IC62VV12816LL IC62VV12816L IC62VV12816L-70B IC62VV |
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM 128Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM 70ns; 1.8V; 128K x 16 ultra low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
HDCS-1020 HDCS-2020 |
Low Power Color VGA (640x480) CMOS Image Sensor 低功耗色VGA40 × 480)的CMOS图像传感 HDCS-2020 · Low Power Color VGA (640x480) CMOS Image Sensor HDCS-1020 · Low Power Color CIF (352x288) CMOS Image Sensor
|
Delta Electronics, Inc. Agilent (Hewlett-Packard)
|
AD73311ARS AD73311ARZ AD73311LARUZ-RL7 |
Low Cost/ Low Power CMOS General Purpose Analog Front End Single-Channel, 3 V and 5 V Front-End Processor for General Purpose Applications Including Speech and Telephony; Package: SOIC - Wide; No of Pins: 20; Temperature Range: Industrial SPECIALTY TELECOM CIRCUIT, PDSO20 Low Cost, Low Power CMOS General Purpose Analog Front End
|
Analog Devices, Inc.
|