PART |
Description |
Maker |
AK2307 AK2307LV |
SPEECH CODEC for Digital Key telephone (5.0V/3.3V)
|
Asahi Kasei Microsystems
|
ZB4BG01 ZB4BG4 ZB4BG2 ZB4BG3 ZB4BG6 ZB4BG7 ZB4BG9 |
Key switches with key no. 455, 421E, 458A, 520E, 3131A
|
List of Unclassifed Man...
|
74323-2004 |
MicroCross DVI Digital Dual Link Component, High Volume Plug Connector SubassemblyVertical, 0.76μm (30μ) Gold (Au), with key, 24 Circuits, Lead Free
|
Molex Electronics Ltd.
|
74323-2101 |
MicroCross DVI Digital Single Channel, High Volume Plug Connector Sub- assembly,for PCB Mount, Gold (Au) Flash, Vertical, with key, 18 Circuits, Lead Free
|
Molex Electronics Ltd.
|
IRFN140SMD |
ER CET 0 22 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET N-Channel Power MOSFET(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)) N沟道功率MOSFET(减振钢板基本:100V的,身份证(续)3.9A,的Rds(on):0.077Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本100V的,身份证(续)3.9A时,RDS(对):0.077Ω))
|
TT electronics Semelab, Ltd. International Rectifier, Corp. Seme LAB
|
SML80H12 SML100H11 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω))
|
SemeLAB SEME-LAB[Seme LAB]
|
SML80A12 SML100A9 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.650Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.650Ω))
|
SemeLAB SEME-LAB[Seme LAB]
|
MC44604 |
High Safety Standby Ladder Mode GreenLine PWM Cont
|
ON Semiconductor
|
NJU26105 |
AGC/eala BASS/T.cont/PEQ/Vol./HPF / QFP32-R1
|
JRC
|
SML50W40 |
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:500V,Id(cont):40A,Rds(on):0.12惟)(N娌??澧?己??楂???????OS?烘?搴??(Vdss:500V,Id(cont):40A,Rds(on):0.12惟)) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
SEME-LAB[Seme LAB] SemeLAB
|
0533980467 0533980267 |
0.5 FPC CONN ASSY ZIF SMT RA(BTM CONT) E/O -LEAD FREE-
|
Molex Electronics Ltd.
|