| PART |
Description |
Maker |
| LT026MS |
LASER DIODE W/MONITOR
|
Sharp
|
| SLU301VR-2-01 SLU301VR-1-02 SLU301VR-24-02 SLU301V |
810 nm, LASER DIODE
785 nm, LASER DIODE
807 nm, LASER DIODE
798 nm, LASER DIODE
|
|
| ZL60402TFD ZL60402TED ZL60402 ZL60402TBD ZL60402TD |
2.5 Gbps, 1310 nm uncooled fabry-perot laser diode module with monitor. ST type connector.
2.5 Gbps, 1310 nm uncooled fabry-perot laser diode module with monitor. SC type connector.
2.5 Gbps, 1310 nm uncooled fabry-perot laser diode module with monitor. FC type connector.
|
Zarlink Semiconductor I...
Zarlink Semiconductor Inc.
ZARLINK[Zarlink Semiconductor Inc]
|
| NX6411GH-AZ |
1 490 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
|
California Eastern Labs
|
| NX6309GH-AZ |
1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
|
California Eastern Labs
|
| NX8349YK |
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
|
California Eastern Labs
|
| NX7663JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX7563JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6314EH |
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS
|
Renesas Electronics Corporation
|
| NX6510GH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
| SLD324ZT-21 SLD324ZT |
High-Power Density 2W Laser Diode
798 nm, LASER DIODE M-272, 12 PIN
|
SONY
NXP Semiconductors N.V.
|
| NX8349XK NX8349YK NX8349TS |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
