| PART |
Description |
Maker |
| AS7C3364PFS36A-166TQI AS7C3364PFS32A AS7C3364PFS32 |
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 9 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 10 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 10 ns, PQFP100
DIODE ZENER SINGLE 1000mW 16Vz 15.5mA-Izt 0.05 5uA-Ir 12.2Vr DO41-GLASS 5K/REEL 64K X 36 STANDARD SRAM, 12 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 12 ns, PQFP100
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| GS820H32Q-5I GS820H32T-150I GS820H32GT-5I GS820H32 |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| MCM67A618 MCM67A618FN10 MCM67A618FN12 MCM67A618FN1 |
64K x 18 Bit Asychronous/Latched Address Fast Static RAM 64K X 18 CACHE TAG SRAM, 10 ns, PQCC52
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| IDT71V633 IDT71V633S11PF IDT71V633S11PFI |
64K x 32 3.3V Synchronous SRAM Flow-Through Outputs Burst Counter, Single Cycle Deselect 64K X 32 CACHE SRAM, 11 ns, PQFP100
|
Integrated Device Technology, Inc.
|
| T35L6432A T35L6432A-5T T35L6432A-5Q |
64K x 32 SRAM
0.5 to 4.6V; 1.6W; 64K x 32 SRAM: 3.3V supply, fully registered inputs and outputs, burst counter
|
TM Technology, Inc.
Taiwan Memory Technology
|
| CY7C1334H-166AXC |
2-Mbit (64K x 32) Pipelined SRAM with NoBLArchitecture 64K X 32 ZBT SRAM, 3.5 ns, PQFP100
|
Cypress Semiconductor, Corp.
|
| K6F1016U4B K6F1016U4B-F K6F1016U4B-FF55 K6F1016U4B |
64K X 16 STANDARD SRAM, 55 ns, PBGA48
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
|
| CY7C1021BNV33 CY7C1021BNV33L-10VXC CY7C1021BNV33L- |
64K X 16 STANDARD SRAM, 12 ns, PDSO44 LEAD FREE, TSOP2-44
64K X 16 STANDARD SRAM, 15 ns, PDSO44 LEAD FREE, TSOP2-44
64K X 16 STANDARD SRAM, 15 ns, PDSO44 TSOP2-44
64K X 16 STANDARD SRAM, 15 ns, PDSO44 0.400 INCH, LEAD FREE, SOJ-44
64K X 16 STANDARD SRAM, 12 ns, PDSO44 TSOP2-44
64K X 16 STANDARD SRAM, 10 ns, PDSO44 LEAD FREE, TSOP2-44
64K x 16 Static RAM
|
Cypress Semiconductor, Corp.
|
| LC3664RSL-12 LC3664RML-10 LC3664RM-15 LC3664RL-15 |
Access time: 100ns; V(cc)max: 7V; 64K (8192 words x 8-bit) SRAM
Access time: 150ns; V(cc)max: 7V; 64K (8192 words x 8-bit) SRAM
|
SANYO
|
| IDT71V633S11PF IDT71V633S11PFI IDT71V633S12PFI IDT |
From old datasheet system
64K x 32 3.3V Synchronous SRAM Flow-Through Outputs Burst Counter, Single Cycle Deselect
3.3V 64K x 32 Static SRAM with Flow-Through Outputs
|
IDT[Integrated Device Technology]
|
| IDT6198L IDT6198L15D IDT6198L15DB IDT6198L15L IDT6 |
CMOS STATIC RAM 64K (16K x 4-BIT) with Output Control 16K X 4 STANDARD SRAM, 70 ns, CQCC28
LED PNL MT 9MM 6V BLACK GREEN 64K的的CMOS静态RAM6K的4位带输出）控
CABLE SMA/SMA 24 RG-142 64K的的CMOS静态RAM6K的4位带输出）控
CMOS STATIC RAM 64K (16K x 4-BIT) with Output Control 16K X 4 STANDARD SRAM, 25 ns, CDIP24
Dual Low-Power JFET-Input General-Purpose Operational Amplifier 8-TSSOP 0 to 70 64K的的CMOS静态RAM6K的4位带输出）控
|
Integrated Device Techn...
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
INTEGRATED DEVICE TECHNOLOGY INC
|
