| PART |
Description |
Maker |
| K6T1008C2EFAMILY |
128Kx8 bit Low Power CMOS Static RAM
|
Samsung Electronic
|
| K6X1008C2D-TQ55 K6X1008C2D-BF55 K6X1008C2D-GF55 K6 |
128Kx8 bit Low Power CMOS Static RAM 128Kx8位低功耗CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K6X1008T2D-TF85 K6X1008T2D K6X1008T2D-GF70 K6X1008 |
128Kx8 bit Low Power CMOS Static RAM 128Kx8位低功耗CMOS静态RAM
SPST to 4PST Slide DIP Switches
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| 28C64AF-15/J 28C64A-15/J 28C64AF-20/J 28C64A-20/J |
16-Bit DACs with 16-Channel Sample-and-Hold Outputs
Dual, Ultra-Low-Power, 8-Bit, Voltage-Output DACs
128Kx8 EEPROM 128Kx8 EEPROM
|
Microchip Technology, Inc.
|
| CAT28C513PI-12T CAT28C513PI-15T CAT28C512TI12T CAT |
512K-Bit CMOS PARALLEL EEPROM
128Kx8 EEPROM 128Kx8 EEPROM
|
http://
Catalyst Semiconductor
NXP Semiconductors N.V.
Atmel, Corp.
|
| WMS128K8-17FEMA WMS128K8-17FMA WMS128K8-35CLC WMS1 |
SRAM|128KX8|CMOS|FP|32PIN|CERAMIC 静态存储器| 128KX8 |的CMOS |计划生育| 32脚|陶瓷
SRAM|128KX8|CMOS|FP|36PIN|CERAMIC 静态存储器| 128KX8 |的CMOS |计划生育| 36PIN |陶瓷
SRAM|128KX8|CMOS|SOJ|32PIN|CERAMIC 静态存储器| 128KX8 |的CMOS | SOJ | 32脚|陶瓷
SRAM|128KX8|CMOS|LLCC|32PIN|CERAMIC 静态存储器| 128KX8 |的CMOS | LLCC | 32脚|陶瓷
|
Renesas Electronics, Corp.
AUK, Corp.
Raltron Electronics, Corp.
Electronic Theatre Controls, Inc.
Epson (China) Co., Ltd.
|
| AS7C31024A-10JC AS7C31024A-10JI AS7C31024A-10TC AS |
3.3V 128KX8 CMOS SRAM (Evolutionary Pinout)(3.3V 128KX8 CMOS 静态RAM（改进的引脚
5V/3.3V 128K x 8 CMOS SRAM (Evolutionary Pinout)
5V/3.3V 128KX8 CMOS SRAM (Evolutionary Pinout)
|
Alliance Semiconductor Corporation
ETC
|
| K6R1008C1C |
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
|
SAMSUNG
|
| BS62LV8001 BS62LV8001EI BS62LV8001EIP55 BS62LV8001 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 70 ns, PBGA48
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 55 ns, PBGA48
Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:25VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:47uF RoHS Compliant: Yes
From old datasheet system
Asynchronous 8M(1Mx8) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
