| PART |
Description |
Maker |
| K6R1016V1D-UI10 K6R1004C1D-JC10 K6R1004C1D-JI10 K6 |
256K X 4 STANDARD SRAM, 10 ns, PDSO32
256K X 4 STANDARD SRAM, 8 ns, PDSO32
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静RAM.3V的）在商业和工业温度范围操作
TV 23C 21#20 2#16 SKT PLUG REC
64Kx16 bit high-speed CMOS static RAM operated at commercial and industrial temperature ranges
64Kx16 bit high-speed CMOS static RAM(3.3V Operaing) operated at commercial and industrial temperature ranges
TV 55C 55#22D SKT PLUG RECP
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| N01L163WN1A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64Kx16 bit
|
NanoAmp Solutions
|
| K6R1016C1D |
64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating). Data Sheet
|
Samsung Electronic
|
| K6F1016U4C |
IC,SRAM,64KX16,CMOS,BGA,48PIN,PLASTIC
|
samsung
|
| K6R1004C1D-JCI10_12 K6R1004C1D-JCI10 K6R1004C1D-JC |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MX29F100T MX29F100TMC-12 MX29F100TMC-55 MX29F100TM |
1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY
|
MCNIX[Macronix International]
|
| A61L73081S-15 |
128K X 8 BIT HIGH SPEED CMOS SRAM 128K的8位高速CMOS SRAM
|
AMIC Technology Corporation
AMIC Technology, Corp.
|
| MX29F100TTC-12 MX29F100TTA-12 |
1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY 64K X 16 FLASH 5V PROM, 120 ns, PDSO48
|
Macronix International Co., Ltd.
|
| HY62SF16804A-I HY62SF16804A-C HY62SF16804A-SM10I |
512K X 16 STANDARD SRAM, 100 ns, PBGA48
High speed, super low power and 8M bit full CMOS SRAM organized as 524,288 words by 16bits
|
HYNIX SEMICONDUCTOR INC
|
| BH616UV1611TI70 BH616UV1611DIP55 BH616UV1611TIP70 |
Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit
|
Brilliance Semiconductor
|
