| PART |
Description |
Maker |
| MGF4319 MGF4319G 431XG MGF4316 MGF4316G MGF431XG M |
Super Low Noise InGaAs HEMT
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGF49180 MGF4914D MGF4910D MGF4917D MGF4916D |
TAPE CARRIER SUPER LOW NOISE INGAAS HEMT
|
Mitsubishi Electric Semiconductor
|
| MGF4953B |
SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package
|
Mitsubishi Electric Semiconductor
|
| MGF4954A MGF4953A |
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
|
Mitsubishi Electric Semiconductor
|
| MGF4919E MGF4918E MGF4914E MGF4910E |
SUPER LOW MOISE InGaAs HEMT
|
Mitsubishi Electric Semiconductor
|
| TC2623 |
12GHz Super Low Noise HEMT / AlGaAs/GaAs Field Effect Transistor
|
United Monolithic Semiconductors
|
| MGFC4419G |
InGaAs HEMT Chip
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| ATF35376 ATF35176 ATF35076 |
2-18 GHz Low Noise Pseudomorphic HEMT
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| HMC-ALH310 |
GaAs HEMT LOW NOISE AMPLIFIER, 37 - 42 GHz
|
Hittite Microwave Corporation
|
| HMC-ALH459 |
GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz
|
Hittite Microwave Corporation
|
