| PART |
Description |
Maker |
| 2N4070 |
(2N4xxx) NPN Transistors
|
API Electronics
|
| 2N5558 2N5358 2N5359 2N5103 2N5104 2N5105 2N5163 2 |
(2N5xxx) Low Power Field Effect Transistors
|
Solitron Devices
|
| 2SK2513-Z 2SK2513 |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
MOS Field Effect Transistor
|
NEC
|
| AD621 AD621ARZ-R7 AD621AR-REEL AD621AR-REEL7 AD621 |
-18V; 650mW; low drift, low power instrumentation amplifier. For weigh scales, transduver interface and data acquisition systems
Low Drift, Low Power Instrumentation Amp with fixed gains of 10 and 100 INSTRUMENTATION AMPLIFIER, 185 uV OFFSET-MAX, 0.2 MHz BAND WIDTH, PDSO8
Low Cost,Low Power Instrumention Amplifier
|
Analog Devices, Inc.
|
| IRF530_D ON0283 IRF530-D IRF530/D |
100V4A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管（N沟道增强型硅门）)
TMOS POWER FET 14 AMPERES
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| RFP10P12 RFM10P15 |
(RFP10P12 / RFP10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
(RFM10P12 / RFM10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
|
GE Solid State
|
| ICL7126 ICL7126CPL 1355 ICL7126CQH 7126CPL ICL7126 |
Low power, 3 1/2 digit A/D converter
Low Power, 3Digit A/D Converter 低功耗，3?位的A / D转换
Low Power/ 3 Digit A/D Converter
Low Power, 3? Digit A/D Converter
From old datasheet system
Low Power, 3 Digit A/D Converter
Low Power, 3? Digit A/D Converter
|
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
Maixm
MAXIM - Dallas Semiconductor
|
| IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State
GE Solid State
|
| MTD6N15 MTD6N15-1 MTD6N15T4 MTD6N15T4G |
Power Field Effect Transistor DPAK for Surface Mount
TMOS Power 150V .3R
|
ON Semiconductor
|
| MRF21060L MRF21060 MRF21060LR3 MRF21060LSR3 |
RF Power Field Effect Transistors
2110??170 MHz, 60 W, 28 V Lateral N??hannel RF Power MOSFETs
|
Freescale Semiconductor, Inc
MOTOROLA
|
| MRF21090 MRF21090R3 MRF21090SR3 |
2170 MHz, 90 W, 28 V Lateral N–Channel RF Power MOSFET
RF Power Field Effect Transistors
|
Freescale (Motorola)
MOTOROLA[Motorola Inc]
Motorola, Inc
|
