| PART |
Description |
Maker |
| MTM12P10 MTP12P06 MTP12P10 |
POWER FIELD EFFECT TRANSISTOR 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
(MTP12P06 / MTP12P10) POWER FIELD EFFECT TRANSISTOR
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| AH182 AH183 AH182-WLA AH183-WLA |
V(cc): 7V; 230-550mW; low power hall effect latch. For cover detector, speed measurement, home safety
Low power Hall Effect Switch
|
Anachip
ETC[ETC]
N.A.
|
| MTM8N35 MTM8N40 MTH8N40 MTH8N35 |
(MTH8N35 / MTH8N40) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
Motorola Semiconductor
MOTOROLA[Motorola, Inc]
|
| A3280EU A3281LH A3283UA-TL 3280 3281 3283 A3280LH |
CHOPPER-STABILIZED PRECISION HALL-EFFECT LATCHES
Chopper-Stabilized, Precision Hall Effect Latch(斩波稳定，精密霍尔效应锁存器)
320 x 240 pixel format, CFL backlight available with power harness
CHOPPER-STABILIZED, PRECISION HALL-EFFECT LATCHES 斩波稳定的，精密霍尔效应锁存
CHOPPER-STABILIZED/ PRECISION HALL-EFFECT LATCHES
Chopper-stabilized,precision hall-effect latch
|
ALLEGRO[Allegro MicroSystems]
Allegro MicroSystems, Inc.
|
| A3210EUA-TL A3209-LH A3209-UA A3209EUA-TL A3209UA- |
MICROPOWER ULTRA-SENSITIVE HALL-EFFECT SWITCHES
MICROPOWER, ULTRA-SENSITIVE HALL-EFFECT SWITCHES
MICROPOWER/ ULTRA-SENSITIVE HALL-EFFECT SWITCHES
Micropower, Ultra-Sensitive Hall Effect Switch(微功耗，超敏感霍尔效应开
D38999/26WC8PN
320 x 240 pixel format, CFL backlight available with power harness
|
ALLEGRO[Allegro MicroSystems]
Allegro MicroSystems, Inc.
http://
|
| 351HE0A1ZA 351HE1A1ZA 351HE2A1ZA 351HE3A1ZA 351HE0 |
1/2 mm)
Single Turn Bushing Mount Hall Effect Sensor in Size 09 (22.2 mm)
POSITION, ROTARY SENSOR-HALL EFFECT, 270deg ROHS COMPLIANT PACKAGE
POSITION, ROTARY SENSOR-HALL EFFECT, 360deg
POSITION, ROTARY SENSOR-HALL EFFECT, 90deg
POSITION, ROTARY SENSOR-HALL EFFECT, 180deg
|
Vishay Siliconix
Vishay Intertechnology, Inc.
VISHAY SPECTROL
|
| IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
|
General Electric Solid State
GE Solid State
|
| MTD6N15 MTD6N15-1 MTD6N15T4 MTD6N15T4G |
Power Field Effect Transistor DPAK for Surface Mount
TMOS Power 150V .3R
|
ON Semiconductor
|
| MRF9045LR1 MRF9045LSR1 |
945 MHz, 45 W, 28 V Lateral N–Channel Broadband RF Power MOSFET
RF POWER FIELD EFFECT TRANSISTORS
|
Freescale (Motorola)
FREESCALE[Freescale Semiconductor, Inc]
|
| MRF9002R2 |
MRF9002R2 1.0 GHz, 2 W, 26 V Lateral N-Channel Broadband RF Power MOSFET
RF Power Field Effect Transistor Array
|
Motorola, Inc
|
| MRF374A |
MRF374A 470-860 MHz, 130 W, 32 V Lateral N-Channel Broadband RF Power MOSFET
RF POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc
Motorola Inc
|
