| PART |
Description |
Maker |
| M5M5256DFP-10VLL-I M5M5256DFP-10VXL-I M5M5256DFP-1 |
From old datasheet system
262144-BIT CMOS STATIC RAM
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位（32768 - Word位）的CMOS静态RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| M5M5V416BRT-85H M5M5V416BRT-85HI M5M5V416BRT-85HW |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
|
| M5M5278DP M5M5278FP M5M5278J M5M5278VP-20V M5M5278 |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M5V208AKV M5M5V208AKV-55HI M5M5V208AKV-70HI |
Memory>Low Power SRAM
2097152-BIT(262144-WORD BY 8-BIT)CMOS STATIC RAM
|
Renesas Electronics Corporation
|
| HM624256ASERIES 624256A HM624256AJP-25 |
262144-word x 4-bit High Speed CMOS Static RAM
From old datasheet system
|
Hitachi Semiconductor
|
| M6MGB331S8BKT M6MGT331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| M5M5256DP-45LL-W M5M5256DP-45XL-W M5M5256DP-55LL-W |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位（32768 - Word位）的CMOS静态RAM
Octal D-Type Transparent Latches With 3-State Outputs 20-SOIC -40 to 85
From old datasheet system
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TC514260BFT TC514260BJ |
262144 WORD X 16 BIT DYNAMIC RAM
|
Toshiba Semiconductor
|
| MSM512800C |
262144-Word X 8-Bit DYNAMIC RAM
|
OKI electronic componets
|
