PART |
Description |
Maker |
A42L0616S-45L A42L0616S-50L A42L0616S-60 A42L0616S |
45ns 1M x 16bit CMOS dynamic ram with EDO page mode 50ns 1M x 16bit CMOS dynamic ram with EDO page mode 60ns 1M x 16bit CMOS dynamic ram with EDO page mode
|
AMIC Technology
|
KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|
K4F641612C K4F641612C-L K4F641612C-TC K4F641612C-T |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4E641612B-TC K4E661612B-TC K4E641612B-L K4E661612 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM416C4100B |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4F641612C-TC K4F661612C-TC |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM416C256D KM416V256D |
256K X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
|
Samsung semiconductor
|
N08L63W2A |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit
|
ON Semiconductor
|
AK4641EN |
16bit stereo CODEC with built-in Microphone-amplifier and 16bit Mono CODEC for Bluetooth Interface.
|
Asahi Kasei Microsystems
|
KM416V1204BJ KM416V1004BT-L7 KM416V1204BT-L7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns 1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT
|
Samsung Electronic Samsung semiconductor
|
LP62S16256FU-70LLI LP62S16256FU-55LLI |
70ns; operating current:40mA; standby current:10uA; 256K x 16bit low voltage CMOS SRAM 55ns; operating current:40mA; standby current:10uA; 256K x 16bit low voltage CMOS SRAM
|
AMIC Technology
|
NL17SZ126 NL17SZ126-D NL17SZ126DF |
LOGIC GATE|BUFFER|CMOS|TSSOP|6PIN|PLASTIC 逻辑门|缓冲区|的CMOS | TSSOP封装| 6针|塑料 Non-inverting 3-State Buffer
|
Micron Technology, Inc. ON Semiconductor
|