| PART |
Description |
Maker |
| IXTT6N150 |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXTN120P20T |
P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
|
IXYS Corporation
|
| MMIX1F360N15T2 |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXTL2X180N10T |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
|
IXYS Corporation
|
| IXTA3N150HV |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXTN62N50L |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IRFF9220 2N6847 JANTX2N6847 JANTXV2N6847 |
-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-205AF)
HEXFET TRANSISTORS THRU-HOLE (TO-205AF)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF)
|
International Rectifier
|
| IRFAC40 IRFAC40-15 |
Simple Drive Requirements
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-204AA/AE)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-204AA/AE)
|
International Rectifier
|
| BSS806N |
OptiMOS2 Small-Signal-Transistor Ultra Logic level (1.8V rated) Avalanche rated
|
TY Semiconductor Co., Ltd
|
| BUZ111SL Q67040-S4003-A2 BUZ111 |
From old datasheet system
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)
|
SIEMENS[Siemens Semiconductor Group]
|
| SPP08P06P09 SPP08P06PG |
8.8 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
P-Channel Enhancement mode Avalanche rated dv/dt rated
|
Infineon Technologies AG
|
