| PART |
Description |
Maker |
| BIR-BLXXX BIR-BM07J4Q-1 |
(BIR Series) INFRARED EMITTING DIODES
|
Yellow Stone
|
| BIR-BNXXX BIR-BOXXX |
(BIR Series) INFRARED EMITTING DIODES
|
Yellow Stone
|
| MIE-324H4 324H4 |
GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE 发动器的T 1包红外发光二极管
Infrared Emitting Diodes (IRED) 红外发光二极管（登记合格决定
|
Unity Opto Technology Co., Ltd.
Vishay Intertechnology, Inc.
UOT[Unity Opto Technology]
|
| MIE-514H4 514H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| MIE-304L3 304L3 |
Infrared Emitting Diodes (IRED)
GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| H24B2 H24B1 |
THE H24B SERIES CONSISTS OF A GALLIUM ARSENIDE INFRARED EMITTING DIODE COUPLED WITH A SILICON PHOTOTRANSISTOR 1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER
|
QT[QT Optoelectronics]
|
| QED123 QED122 QED121 QED122A3R0 |
PLASTIC INFRARED LIGHT EMITTING DIODE 4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| CQX15 |
GaAs INFRARED EMITTING DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| F5D3 F5D1 F5D2 F5D1B |
AlGaAs INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 880 nm
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| QEC113 QEC112 |
GAAS INFRARED EMITTING DIODE 2.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
