| PART |
Description |
Maker |
| EC635 |
Designing with thermally protected TMOV Varistors in TVSS Applications
|
LITTELFUSE[Littelfuse]
|
| 33981 PC33981PNA/R2 MC33981 |
High-Frequency, High-Current, Self-Protected High-Side Switch (4.0 m?up to 60 kHz)
High-Frequency, High-Current, Self-Protected High-Side Switch (4.0 mз up to 60 kHz) 高频率，大电流，自我保护的高边开关（4.0mз0千赫
High-Frequency/ High-Current/ Self-Protected High-Side Switch (4.0 m up to 60 kHz)
|
Motorola, Inc.
Motorola Mobility Holdings, Inc.
Motorola Inc
|
| PTFB210801FAV1R0XTMA1 PTFB210801FAV1R250 PTFB21080 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PTFB090901FAV2R0 PTFB090901FAV2R250XTMA1 PTFB09090 |
Thermally-Enhanced High Power RF LDMOS FETs
|
Infineon Technologies A...
|
| PTVA127002EV-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PTFA181001GL |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies
|
| PTAB182002FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PTFA261301E PTFA261301F |
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62-2.68 GHz
|
Infineon Technologies AG
|
| PTF240101S |
Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400-2700 MHz
|
Infineon Technologies AG
|
| PTF140451E PTF140451F |
Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1450 - 1550 MHz
|
Infineon Technologies AG
|
| PTFA260851E PTFA260851F |
Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 鈥?2700 MHz
|
Infineon Technologies AG
|
