PART |
Description |
Maker |
APL1001P |
POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1000V 18.0A 0.60OHM
|
Advanced Power Technology
|
IRHN7C50SE IRHN2C50SE |
TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)
|
IRF[International Rectifier]
|
OM6N100SA OM5N100SA OM3N100SA OM3N100ST OM1N100SA |
1000V; up to 6 Amp, N-channel MOSFET 1000V Single N-Channel Hi-Rel MOSFET in a D3 package 1000V Single N-Channel Hi-Rel MOSFET in a TO-254AA package POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE
|
Omnirel International Rectifier ETC List of Unclassifed Manufacturers
|
IRFMG50 |
1000V Single N-Channel Hi-Rel MOSFET in a TO-254AA package POWER MOSFET 1000V, N-CHANNEL THRU-HOLE (TO-254AA)
|
International Rectifier
|
STU7NB100 6508 |
N - CHANNEL 1000V - 1.2 - 7.3A - Max220 PowerMESH TM MOSFET From old datasheet system N - CHANNEL 1000V - 1.2ohm - 7.3A - Max220 PowerMESH MOSFET
|
意法半导 STMICROELECTRONICS[STMicroelectronics]
|
IRLML5103 IRLML5103PBF IRLML5103TR |
-30V Single P-Channel HEXFET Power MOSFET in a Micro 3 package Power MOSFET(Vdss=-30V, Rds(on)=0.60ohm)
|
IRF[International Rectifier]
|
MAX4695ETC MAX4695EUB MAX4695 |
Low-Voltage, 60ohm Dual SPDT Analog Switch in Thin QFN
|
MAXIM[Maxim Integrated Products]
|
APT1004R2BN APT1004RBN |
Circular Connector; No. of Contacts:32; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:18; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:18-32 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV 1000V 4.4A 4.00 Ohm / 1000V 4.0A 4.20 Ohm
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
9N100L-T47-T 9N100G-T47-T |
9A, 1000V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
SML100A9 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
TT electronics Semelab Limited Semelab(Magnatec)
|