PART |
Description |
Maker |
IRGP430U |
Insulated Gate Bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体 绝缘门双极晶体管(IGBTs)(超快速绝缘栅型双极型晶体管) 500V Discrete IGBT in a TO-3P (TO-247AC) package
|
International Rectifier, Corp.
|
APT33GF120B2RD APT33GF120LRD |
Fast IGBT & FRED 1200V 52A The Fast IGBT is a new generation of high voltage power IGBTs. The Fast IGBT⑩ is a new generation of high voltage power IGBTs. The Fast IGBTis a new generation of high voltage power IGBTs.
|
Advanced Power Technology Ltd.
|
APT30GT60BR |
The Thunderbolt IGBTis a new generation of high voltage power IGBTs. Thunderbolt IGBT 600V 58A The Thunderbolt IGBT is a new generation of high voltage power IGBTs. The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs.
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
APT30GT60CR |
The Thunderbolt IGBTis a new generation of high voltage power IGBTs. The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Thunderbolt IGBT 600V 30A
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
SG23N06DT SG23N06T |
Discrete IGBTs
|
Sirectifier Global Corp. Sirectifier Semiconductors
|
SG75S12S |
Discrete IGBTs
|
Sirectifier Global Corp.
|
SG200N06S |
Discrete IGBTs
|
Sirectifier Global Corp... Sirectifier Semiconductors Sirectifier Semiconduct...
|
SG50N06DS SG50N06S |
Discrete IGBTs
|
Sirectifier Global Corp. Sirectifier Semiconductors
|
GT20J341 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
IRG4PC30W IRG4PC30WPBF |
Insulated Gate Bipolar Transistors (IGBTs)(绝缘栅型双极型晶体管) 绝缘门双极晶体管(IGBTs)(绝缘栅型双极型晶体管 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) 600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp. IRF[International Rectifier]
|