| PART |
Description |
Maker |
| IRG4PC60F-P |
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC Solder Plate package
INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT
|
IRF[International Rectifier]
|
| IRG4PC60FPBF |
INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT
|
International Rectifier
|
| IRGMC50F 1947 |
INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT
From old datasheet system
|
IRF[International Rectifier]
|
| APT11GF120BRDQ1 APT11GF120BRDQ1G |
FAST IGBT & FRED
Insulated Gate Bipolar Transistor-NPT Medium Speed; Package: TO-247 [B]; BV(CES) (V): 1200; VCE(sat) (V): 3; IC (A): 11; 25 A, 1200 V, N-CHANNEL IGBT, TO-247AC
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| RM50HG-12S RM50HG-12S01 |
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| IRG4BC40S |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.32V @Vge=15V Ic=31A)
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A)
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package
|
IRF[International Rectifier]
|
| IRG4PC30SPBF |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT
|
International Rectifier
|
| IRG4BC30S-SPBF |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT
|
International Rectifier
|
| GA100NA60U GA100NA60UP |
Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A
|
Vishay Siliconix
|
| AIKW50N65DF5 |
High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode
|
Infineon Technologies A...
|
| RM100HA-XXF |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| RM50HA-XXF |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
