| PART |
Description |
Maker |
| IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管（N沟道增强型硅门）)
From old datasheet system
TMOS POWER FET 27 AMPERES
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| MRF1518T1 |
The RF MOSFET Line RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| MRF186 |
The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR Channel Enhancement-Mode Lateral MOSFET
The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR Channel Enhancement?Mode Lateral MOSFET
|
Motorola, Inc
|
| MRF19030 MRF19030R3 MRF19030SR3 |
RF POWER FIELD EFFECT TRANSISTORS L BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| IRFD112 IRFD113 |
(IRFD112 / IRFD113) POWER-MOSFET FIELD EFFECT POWER TRANSISTOR
|
GE Solid State
|
| MRF9210 MRF9210R3 |
MRF9210 880 MHz, 200 W, 26 V Lateral N-Channel RF Power MOSFET
RF Power Field Effect Transistor
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| RFK35N10 RFK35N08 |
POWER MOS FIELD - EFFECT TRANSISTORS, N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| PHB55N03LTA PHD55N03LTA PHP55N03LTA |
N-channel enhancement mode field-effect transistor 55 A, 25 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-channel enhancement mode field-effect transistor 55 A, 25 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MRF1511NT1 |
RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET
|
Motorola
|
| MRF1511T1 |
RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET
|
MOTOROLA[Motorola, Inc]
|
