| PART |
Description |
Maker |
| NUS5530MNR2G |
Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor 3.9 A, 20 V, 0.083 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Jewel Hill Electronic Co., Ltd.
|
| FDFMA2P85308 FDFMA2P853 |
-20V Integrated P-Channel PowerTrenchMOSFET and Schottky Diode
Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode
Integrated P-Channel PowerTrench庐 MOSFET and Schottky Diode
Integrated P-Channel PowerTrench? MOSFET and Schottky Diode
|
Fairchild Semiconductor
|
| NTLLD4901NFTWG |
Dual N-Channel Power MOSFET with Integrated Schottky
|
ON Semiconductor
|
| 2SK2432 2SK2619 2SK2636 2SK2403 2SJ454 2SK2404 2SK |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 7A I(D)
TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 5A I(D)
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 5A I(D)
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 16A I(D) 晶体管| MOSFET的| N沟道| 250V五（巴西）直| 16A条（丁）
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 6A I(D) | TO-262AA 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 6A条（丁）|62AA
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 20A I(D) 晶体管| MOSFET的| N沟道| 450V五（巴西）直| 20A条（丁）
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
|
Sanyo Electric Co., Ltd.
|
| NTLLD4901NF |
Power MOSFET and Integrated Schottky Diode, 30 V, Dual N-Channel
|
ON Semiconductor
|
| NUS5530MN NUS5530MNR2G |
Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor
|
ONSEMI[ON Semiconductor]
|
| FLS3217 FLS3217M FLS3217N FLS3247N |
Single-Stage PFC Primary-Side-Regulation Offline LED Driver with Integrated Power MOSFET
|
Fairchild Semiconductor
|
| AM29LV040B-60REC AM29LV040B-70JC AM29LV040B-60RFC |
x8 Flash EEPROM
450V Hybrid Controller IC and HEXFET Power MOSFET for Indirect Feedback Quasi-Resonant including low frequency PRC Fly-Back Converter type SMPS Applications packaged in a 5-Lead TO-220
30W Output AC-DC Integrated Switchers in a TO-220 (5-Leads) package
650V Hybrid Controller IC and HEXFET Power MOSFET for Quasi-Resonant including low frequency PRC Fly-Back Converter type SMPS Applications packaged in a 5-Lead TO-220
60W Output AC-DC Integrated Switchers in a TO-262 (5-Lead) package
180W Output AC-DC Integrated Switchers in a TO-220 (5-Leads) package
650V Hybrid Controller IC and HEXFET Power MOSFET for Pulse Ratio Control Fly-Back Converter type SMPS Applications packaged in a 8-Lead PDIP
650V Hybrid Controller IC and HEXFET Power MOSFET for Quasi-Resonant including low frequency PWM Fly-Back Converter type SMPS Applications packaged in a 6-Lead TO-220
120W Output AC-DC Integrated Switchers in a TO-262 (5-Lead) package
600V Copack IGBT in a D2-Pak package x8闪存EEPROM
600V Copack IGBT in a TO-220AB package x8闪存EEPROM
60W Output AC-DC Integrated Switchers in a TO-220 (5-Leads) package
|
Unisonic Technologies Co., Ltd.
Advanced Micro Devices, Inc.
|
| EMC5.0F-LC EMC8.0F-LC EMC3.3F-LC EMC15F-LC EMC12F- |
Direct ProTek Replacement:EMC5.0F-LC
Two-Phase Multiphase Buck PWM Controller with Integrated MOSFET Drivers; Temperature Range: 0°C to 70°C; Package: 24-QFN
1.2A Integrated FETs, High Efficiency Synchronous Buck Regulator; Temperature Range: -40°C to 85°C; Package: 10-DFN
High Power LED Driver; Temperature Range: -25°C to 85°C; Package: 20-QFN
Automotive Grade TFT-LCD DC/DC with Integrated Amplifiers; Temperature Range: -25°C to 85°C; Package: 32-TQFP
直接太克替代：EMC3.3F，立法会
Two-Phase Multiphase Buck PWM Controller with Integrated MOSFET Drivers; Temperature Range: 0°C to 70°C; Package: 24-QFN 直接太克替代：EMC8.0F，立法会
|
New Japan Radio Co., Ltd.
|
| 2SK3029 2SK3022 2SK3029TENTATIVE PANASONICCORPORAT |
Silicon N-Channel Power F-MOS FET 5000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
