| PART |
Description |
Maker |
| M39P0R9070E2 M39P0R9070E2ZADE M39P0R9070E2ZADF |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
| M36P0R9060N0ZANE M36P0R9060N0ZANF M36P0R9060N0 |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Mux I/O, Multi-Chip Package
|
Numonyx B.V
|
| M36LLR8760 M36L0R7050 M36L0R7050B0ZAQE M36L0R7050B |
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package 128兆位（多银行，多层次，突发）闪存32兆位00万16）移动存储芯片，1.8V电源多芯片封
CAP 2.2PF 200V 0.5PF C0H DIP-2 BULK S-MIL-C-39014
ER 23C 16 12 8 4 SKT RECP WALL
CAP 0.1UF 50V 10% X7R DIP-2 BULK P-MIL-C-39014
128 Mbit (Multiple Bank / Multi-Level / Burst) Flash Memory 32 Mbit (2M x16) PSRAM
From old datasheet system
|
STMicroelectronics N.V.
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| M36L0R8060T0 M36L0R8060B0 M36L0R8060 |
256 Mbit (Multiple Bank / Multi-Level / Burst) Flash Memory 64 Mbit (Burst) PSRAM
256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| 340-03B-4600 340-03B-4500 340-03B-4800 340-02A-280 |
Multi-level Series 多级系列
|
Electronic Theatre Controls, Inc.
|
| NB7L72MMNTXG |
Multi?Level Inputs w/ Internal Termination
|
ON Semiconductor
|
| CY29FCT520ATPC |
<font color=red>[Old version datasheet]</font> Multi-Level Pipeline Register
|
TI store
|
| NB6L11M_07 NB6L11M NB6L11MMNG NB6L11MMNR2G NB6L11M |
2.5V / 3.3V 1:2 Differential CML Fanout Buffer Multi−Level Inputs w/ Internal Termination
|
ONSEMI[ON Semiconductor]
|
| M58LT128GST1ZA5E M58LT128GSB1ZA5E M58LT128GSB1ZA5F |
128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
|
意法半导
|
| M58LR128FB85ZB6T |
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
|
ST Microelectronics
|
