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MTA1N60E - FULLY ISOLATED TMOS E-FET POWER FIELD EFFECT TRANSISTOR Fully Isolated TMOS E-FET / Power Rifld Effect Transistor

MTA1N60E_713771.PDF Datasheet


 Full text search : FULLY ISOLATED TMOS E-FET POWER FIELD EFFECT TRANSISTOR Fully Isolated TMOS E-FET / Power Rifld Effect Transistor


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MTA1N60E FULLY ISOLATED TMOS E-FET POWER FIELD EFFECT TRANSISTOR
Fully Isolated TMOS E-FET / Power Rifld Effect Transistor
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From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
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From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
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From old datasheet system
TMOS POWER FET 3.0 AMPERES 1200 VOLTS
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From old datasheet system
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
ON Semiconductor
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MTD3N25E MTD3N25E-D TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
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ON Semiconductor
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MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培,功率场效应晶体000伏特的RDS(on)\u003d 0.80欧姆
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
MTP4N40E MTP4N40E-D TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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Micro Electronics
N.A.
CDIL[Continental Device India Limited]
Continental Device India Li...
Continental Device Indi...
 
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