| PART |
Description |
Maker |
| GT25G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC4685 E000978 |
NPN EPITAXIAL TYPE (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
From old datasheet system
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| 2SA1802 E000561 |
TRANSISTOR (STROBE FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| AP30G40AEO |
Strobe Flash Applications
|
Advanced Power Electron...
|
| GT8G13106 |
Strobe Flash Applications
|
Toshiba Semiconductor
|
| RJP5001APP-00-T2 RJP5001APP |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| RJP4009ANS RJP4009ANS-15 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| CDF |
ALUMINUM ELECTROLYTIC CAPACITORS FOR STROBE FLASH
|
RUBYCON[RUBYCON CORPORATION]
|
| GT8G134 |
Silicon N Channel IGBT Strobe Flash Applications
|
Toshiba Semiconductor
|
| GT8G103 |
N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SD211809 |
Low VCE(sat) transistor (strobe flash)
|
Rohm
|
