| PART |
Description |
Maker |
| 2N5551 2N5401 2N5223 2N5232A 2N5172 2N4403 2N5550 |
Small Signal Transistors TO-92 Case (Continued)
RES ARRAY 1.5K OHM 8TRM 4RES SMD
Small Signal Transistors TO-92 Case (Continued) 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
Small Signal Transistors TO-92 Case (Continued) 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
Small Signal Transistors TO-92 Case (Continued) 50 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
Small Signal Transistors TO-92 Case (Continued) 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
Leaded Small Signal Transistor General Purpose
|
Central Semiconductor C...
http://
CENTRAL[Central Semiconductor Corp]
Central Semiconductor Corp.
Central Semiconductor, Corp.
|
| 2N6648 2N6569 2N6470 2N6471 2N6472 2N6594 2N6649 2 |
POWER TRANSISTORS TO-3 CASE
Leaded Power Transistor General Purpose
|
Central Semiconductor C...
CENTRAL[Central Semiconductor Corp]
|
| 2N5016 2N5424 2N2189 2N855 2N971 2N973 2N710 2N966 |
silicon transistors UHF/VHF power transistors
Supercapacitor; Capacitance:22F; Series:EDL; Voltage Rating:2.3VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Radial
|
List of Unclassifed Man...
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
Central Semiconductor Corp
ETC[ETC]
|
| MS1329 |
RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 60; P(in) (W): 12; Gain (dB): 7; Vcc (V): 28; Cob (pF): 80; Case Style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
Microsemi, Corp.
|
| MS1506 |
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 40; P(in) (W): 5; Gain (dB): 9; Vcc (V): 13.6; Cob (pF): 95; fO (MHz): 0; Case Style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| BF421 BF423 ON0208 |
High Voltage Transistors(PNP Silicon)
From old datasheet system
CASE 29-11, STYLE 14 TO-2 (TO-26AA)
|
ON Semiconductor
|
| MS1337 |
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 30; P(in) (W): 3; Gain (dB): 10; Vcc (V): 12.5; Cob (pF): 120; fO (MHz): 0; Case Style: M113 VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| 2SA2118 |
Power Device - Power Transistors - General-Purpose power amplification
Power Transistors Silicon PNP epitaxial planar type
|
PANASONIC[Panasonic Semiconductor]
|
| D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON027 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS
Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS
From old datasheet system
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
http://
|
| BD535 BD537 BD536 BD533 4133 BD538 BD534 -BD536 |
Complemetary Silicon Power Transistors(浜?ˉ纭?????浣??)
From old datasheet system
COMPLEMENTARY SILICON POWER TRANSISTORS
RI Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 15V; Power: 2W; Custom Solutions Available; 1kVDC
Complemetary Silicon Power Transistors(互补硅功率晶体管)
|
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| 2SC3039 C3039 2SC3039M 2SC3039N |
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 7A I(C) | TO-220AB
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
POWER TRANSISTORS(7.0A/400V/50W)
POWER TRANSISTORS(7.0A,400V,50W)
POWER TRANSISTORS(7.0A400V50W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NT |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon Power Rectifier Diode 6 Amp
Silicon Power Rectifier Diode, 6 Amp
Silicon Power Rectifier Diode / 6 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
|
NTE[NTE Electronics]
|
