| PART |
Description |
Maker |
| OP999 |
PIN Sili con Photodiode
|
OPTEK[OPTEK Technologies]
ETC
|
| OP950 |
PIN Sili con Pho todiode
|
OPTEK[OPTEK Technologies]
ETC
|
| OP905 |
PIN Sili con Pho todiode
|
OPTEK[OPTEK Technologies]
|
| 154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五（巴西）总裁| 7.5AI（丙
|
NXP Semiconductors N.V.
Bel Fuse, Inc.
YEONHO Electronics Co., Ltd.
|
| BCM847DS BCM847BS BCM847BV BCM847BV115 |
NPN/NPN matched double transistors; Package: SOT666 (SS-Mini); Container: Tape reel smd 100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN/NPN matched double transistors
|
NXP Semiconductors N.V.
|
| 2SD946 2SD946A 2SD946AQ 2SD946AR 2SD950 2SD951 2SD |
Si NPN triple diffused junction mesa . Line-operated horizontal deflection output.
SI NPN EPITAXIAL PLANAR DARLINGTON 1 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-126
|
PANASONIC[Panasonic Semiconductor]
Panasonic, Corp.
|
| PEMH14 PUMH14 5C H1- H1P H1T H1W |
NPN/NPN resistor-equipped transistors R1 = 47 kohm, R2 = open NPN/NPN配电阻型晶体管；R1=47千欧姆，R2=开
NPN/NPN resistor-equipped transistors R1 = 47 kW-ohm, R2 = open
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 2N5682 2N5681 2N5681SMD |
100V Vce, 1A Ic, 30MHz NPN bipolar transistor
NPN SILICON TRANSISTORS
Expitaxial Planar NPN Transistors In jedec TO-39 Metal Case(大功率、外延平面NPN晶体管（TO-39金属封装，用于通用、放大器、开关电路）)
|
SEME-LAB[Seme LAB]
Semelab(Magnatec)
|
| BFG67_XR BFG67 BFG67_X BFG67X BFG67XR BFG67/XR BFG |
NPN 8 GHz wideband transistors
NPN 8GHz wideband transistor(NPN 8G赫兹 宽带晶体
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| BDY96 |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 10A I(C) | TO-3
Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=350 / Ic=10 / Hfe=15-60 / fT(Hz)=10M / Pwr(W)=40
|
Semelab
|
| 2N2915 2N2913 2N2917 2N2915CECC 2N2913CECC |
DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE
Dual NPN Planar Transistor in a TO-77 Hermetic Package(双晶体管TO-77陶瓷封装
NPN 30 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-77
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
TE Connectivity, Ltd.
|
| PEMH10 PUMH10 |
NPN/NPN resistor-equipped transistors; R1 = 2.2 k惟, R2 = 47 k惟
NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ
NPN-NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 47 kOhm NPN-NPN配电阻型晶体管，R1=2.2千欧姆，R2=47千欧
|
NXP Semiconductors N.V.
|
