PART |
Description |
Maker |
K6F4016U4G |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung semiconductor
|
EM640FU16E |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
EM646FV16FU |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
|
MX27C4111 MX27C4111MC-10 MX27C4111MC-12 MX27C4111M |
4M-BIT [512K x8/256K x16] CMOS EPROM WITH PAGE MODE 256K X 16 OTPROM, 90 ns, PDIP40 SIGN, NO SMOKING, 250X350MM, RP; RoHS Compliant: NA
|
Macronix International Co., Ltd. PROM MCNIX[Macronix International]
|
HY62UF16800B |
x16|3V|55/70/85|Super Low Power Slow SRAM - 8M x16 | 3V的| 55/70/85 |超级低功耗SRAM的速度 800
|
Alpha Industries, Inc.
|
EM6320FP16AW-55LF EM6320FP16AW-55S EM6320FP16AW-85 |
256K x16 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic... Emerging Memory & Logic Solutions Inc
|
KM616FS4110ZI-10 KM616FS4110ZI-7 |
100ns; V(cc): -2 to 3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM 70ns; V(cc): -2 to 3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM
|
Samsung Electronic
|
HN27C256G HN27C256G-17 HN27C256G-25 HN27C256G-20 |
256K (32K x 8-bit) UV EPROM, 200ns 256K (32K x 8-bit) UV EPROM, 250ns 32768-WORD x 8-BIT CMOS UV ERASABLE AND PROGRAMMABLE ROM 256K (32K x 8-bit) UV EPROM, 170ns
|
Hitachi Semiconductor
|
HY62SF16804B HY62SF16804B-C HY62SF16804B-DFC HY62S |
RES, 33, 1/2W, TKF, 5%, 2010 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM
|
Hynix Semiconductor Inc.
|
HY62UF16406C |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
HY62SF16406C |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
HY62LF16404D |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|