PART |
Description |
Maker |
MA4VAT907-1061T |
High IIP3 PIN Diode Variable Attenuator 0.80-1.0 GHz
|
MACOM[Tyco Electronics]
|
SKY12239-11 SKY12239-11-EVB |
High IIP3 10 MHz to 1.5 GHz Voltage-Controlled Variable Attenuator
|
Skyworks Solutions Inc.
|
MAX2374EBT MAX2374 |
SiGe, Variable IIP3, Low-Noise Amplifier in UCSP Package From old datasheet system
|
MAXIM - Dallas Semiconductor MAXIM[Maxim Integrated Products]
|
1N2981D 1N2987C 1N2973D 1N2987D 1N2989C 1N2980D 1N |
Diode Zener Single 17V 5% 10W 2-Pin DO-4 Diode Zener Single 25V 5% 10W 2-Pin DO-4 Diode Zener Single 9.1V 5% 10W 2-Pin DO-4 Diode Zener Single 30V 5% 10W 2-Pin DO-4 Diode Zener Single 16V 5% 10W 2-Pin DO-4 Diode Zener Single 7.5V 5% 10W 2-Pin DO-4 Diode Zener Single 24V 5% 10W 2-Pin DO-4 Diode Zener Single 175V 20% 10W 2-Pin DO-4 Diode Zener Single 50V 5% 10W 2-Pin DO-4 Diode Zener Single 43V 5% 10W 2-Pin DO-4 Diode Zener Single 56V 5% 10W 2-Pin DO-4 Diode Zener Single 13V 5% 10W 2-Pin DO-4 Diode Zener Single 8.2V 5% 10W 2-Pin DO-4 Diode Zener Single 15V 5% 10W 2-Pin DO-4 Diode Zener Single 27V 5% 10W 2-Pin DO-4 Diode Zener Single 18V 5% 10W 2-Pin DO-4 Diode Zener Single 105V 5% 10W 2-Pin DO-4 Diode Zener Single 52V 5% 10W 2-Pin DO-4 Diode Zener Single 47V 10% 10W 2-Pin DO-4 Diode Zener Single 36V 10% 10W 2-Pin DO-4 Diode Zener Single 36V 5% 10W 2-Pin DO-4 Diode Zener Single 51V 5% 10W 2-Pin DO-4 Diode Zener Single 47V 5% 10W 2-Pin DO-4
|
New Jersey Semiconductor
|
MA4VAT2000-1277T |
HMIC PIN Diode Variable Attenuator 1.70-2.20 GHz
|
MACOM[Tyco Electronics]
|
MAAV-007088-0001TB MAAV-007088-000100 MAAV-007088- |
PIN Diode Based Variable Attenuator 50 - 1000 MHz
|
Tyco Electronics
|
ALM-38140-TR1G ALM-38140 ALM-38140-BLKG |
50MHz - 4GHz PIN Diode Variable Attenuator Module
|
AVAGO TECHNOLOGIES LIMITED
|
BBY5907 BBY59-02V |
27.8 pF, 15 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE SC-79, 2 PIN Silicon Tuning Diode
|
EUPEC GMBH ?CO KG Infineon Technologies AG Infineon Technologies A...
|
ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE 40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE 150 V, SILICON, PIN DIODE 27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
GCX1205-23 GCX1217-23 GCX1206-23 GCX1213-23 GCX120 |
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 5.6 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 1.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE VARACTOR DIODES Surface Mount SOT23 Abrupt Junction TM 3.9 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
MICROSEMI CORP-LOWELL Microsemi Corporation
|
MV409RLRB |
VHF BAND, 29 pF, 20 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, TO-92 PLASTIC, CASE 182-02, TO-226AC, 2 PIN
|
Motorola Mobility Holdings, Inc.
|