| PART |
Description |
Maker |
| JDH2S01T |
UHF Band Mixer
Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer
|
Toshiba Corporation
|
| 1SS295 |
UHF BAND MIXER APPLICATIONS
|
Guangdong Kexin Industrial Co.,Ltd
|
| 1SS315 |
UHF BAND MIXER APPLICATIONS
|
Guangdong Kexin Industrial Co.,Ltd
|
| BAT29 |
SILICON, UHF BAND, MIXER DIODE, DO-35
|
STMICROELECTRONICS
|
| BAT19-ARX |
SILICON, UHF BAND, MIXER DIODE, DO-35
|
STMICROELECTRONICS
|
| 1SS15407 |
UHF~S Band Mixer/Detector Applications
|
Toshiba Semiconductor
|
| TDA5630 TDA5630M TDA5630T TDA5631 TDA5631M TDA5631 |
9 V VHF/ hyperband and UHF mixer/oscillator for TV and VCR 3-band tuners
9 V VHF, hyperband and UHF mixer/oscillator for TV and VCR 3-band tuners
|
PHILIPS[Philips Semiconductors]
|
| TA1303AFN |
MIXER/OSCILLATOR BUILT-IN FREQUENCY SYNTHSIZER FOR VHF, CATV AND UHF BAND
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS29501 1SS295 |
DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE UHF BAND MIXER APPLICATIONS
|
Toshiba Semiconductor
|
| 1SS154 |
Diode Silicon Epitaxial Schottky Barrier Type UHF~S Band Mixer/Detector Applications
|
TOSHIBA
|
| BAT68-04 BAT68-04W BAT68-06 BAT68-06W BAT68-07W |
SILICON, VHF-UHF BAND, MIXER DIODE
Silicon Schottky Diodes
|
Infineon Technologies AG
|
| UTV005P |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 0.5; Gain (dB): 10; Vcc (V): 20; ICQ (A): 0.22; IMD Type (dB): -60; Case Style: 55FU-2 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
0.5 Watts, 20 Volts, Class A UHF Television - Band IV & V
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
