| PART |
Description |
Maker |
| W3EG64128S-AD4 |
1GB - 2x64Mx64 DDR SDRAM UNBUFFERED w/PLL 1GB 2x64Mx64 DDR SDRAM的缓冲瓦锁相
|
Electronic Theatre Controls, Inc.
|
| W3EG264M64EFSUXXXD4-MG W3EG264M64EFSUXXXD4-SG |
1GB - 2x64Mx64 DDR SDRAM, UNBUFFERED, FBGA
|
http://
|
| W3DG64126V7D2 W3DG64126V75D2 W3DG63126V10D2 W3DG63 |
1GB - 2x64Mx64, SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| WV3DG64127V-D2 WV3DG64127V7D2 WV3DG64127V10D2 WV3D |
1GB - 2x64Mx64, SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| HYMD212G726ALS4-H HYMD212G726ALS4-K HYMD212G726ALS |
128Mx72|2.5V|M/K/H/L|x36|DDR SDRAM - Registered DIMM 1GB 128Mx72 | 2.5V的| /升| x36 | DDR SDRAM内存-内存1GB的注
Registered DDR SDRAM DIMM
128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
Hynix Semiconductor
HYNIX SEMICONDUCTOR INC
|
| HYMD5126468 HYMD512646L8 |
128Mx64|2.5V|K/H/L|x16|DDR SDRAM - Unbuffered DIMM 1GB 128Mx64 | 2.5V的| /升| x16 | DDR SDRAM无缓冲DIMM 1GB
|
Lattice Semiconductor, Corp.
|
| HYMD512G726BF8N-D43 HYMD512G726BF8N-J HYMD512G726B |
Registered DDR SDRAM DIMM
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
DDR SDRAM - Registered DIMM 1GB
|
http://
Hynix Semiconductor, Inc.
|
| EBD11ED8ADFB-5C EBD11ED8ADFB-5 EBD11ED8ADFB-5B EBD |
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks)
|
ELPIDA MEMORY INC
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| K4H1G0838M-TC_LB3 K4H1G0438M K4H1G0438M-TC_LA2 K4H |
1Gb M-die DDR SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| EBD11UD8ABFB-7B EBD11UD8ABFB EBD11UD8ABFB-6B EBD11 |
1GB Unbuffered DDR SDRAM DIMM
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| K4H1G0738C-UC_LB0 K4H1G0638C K4H1G0638C-UC_LA2 K4H |
Stacked 1Gb C-die DDR SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
