| PART |
Description |
Maker |
| WMS512K8BV-20E WMS512K8BV-17E WMS512K8BV-17DEMEA W |
20ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
17ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
15ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
512K X 8 STANDARD SRAM, 17 ns, CDSO32
512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间17ns
512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间20ns
|
White Electronic Designs Corporation
|
| WMS512K8BV-20CIE WMS512K8BV-20CIEA WMS512K8BV-17CI |
512Kx8 MONOLITHIC SRAM
|
WEDC[White Electronic Designs Corporation]
|
| EDI88512CAXMB EDI88512LPAXMB EDI88512LPAXMC EDI885 |
512Kx8 Plastic Monolithic SRAM CMOS
|
WEDC[White Electronic Designs Corporation]
|
| EDI88512LPAXN36M EDI88512CAXNC EDI88512LPAXNI EDI8 |
512Kx8 Monolithic SRAM, SMD 5962-95600
|
http://
|
| 5962-9561307HZX WMS512K8L-15CLC WMS512K8L-15CLCA W |
512Kx8 MONOLITHIC SRAM
BOX 4.38X3.25X0.91BLACK BULK
STD BLK BOX (3.25X4.38X0.9)
STD-I BLK BOX (3.25X4.38X0.9)
BOX END PANEL INFRA-RED A27 SERI 512Kx8整装静态存储器
BOX 4.38X3.25X0.91 WALL MT BLK 512Kx8整装静态存储器
BOX 3.3X5.6X1.5 STD EMI BLACK 512Kx8整装静态存储器
BOX 4.38X3.25X1.91 WALL MT BLK 512Kx8整装静态存储器
BOX 4.38X3.25X1.91 GRY 512Kx8整装静态存储器
BOX 4.38X3.25X1.91 WALL MT GRY 512Kx8整装静态存储器
BOX 6.88X4.88X.9 BLK 512Kx8整装静态存储器
BOX STD ALM (4.88X6.88X.9) 512Kx8整装静态存储器
BOX 5.63X3.25X1.51 WALL MT GRY 512Kx8整装静态存储器
BOX 5.63X3.25X1.51 WALL MT BLK 512Kx8整装静态存储器
STD ALMOND BOX (3.25X4.38X0.9) 512Kx8整装静态存储器
BOX 5.63 X 3.26 X .91 GRY 512Kx8整装静态存储器
512Kx8 MONOLITHIC SRAM 512Kx8整装静态存储器
END PANEL W/DB25 FOR A-31 BLK 512Kx8整装静态存储器
BOX 4.38X3.25X2.01 BLK 512Kx8整装静态存储器
BOX 4.38X3.25X2.01 GRY 512Kx8整装静态存储器
DIODE, MICRO-MELFDIODE, MICRO-MELF; Voltage, Vrrm:100V; Current, If av:0.15A; Case style:MicroMELF; Current, If max:0.2A; Current, Ifrm:0.45mA; Current, Ifs max:2A; Diameter, External:1.35mm; Diode type:Small signal; Length / Height,
SENSOR HI-IMP 30PSIA DIP PKG
20ns; 512K x 8 monilithic SRAM, SMD 5962-95613
35ns; 512K x 8 monilithic SRAM, SMD 5962-95613
15ns; 512K x 8 monilithic SRAM, SMD 5962-95613
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
List of Unclassifed Man...
White Electronic Designs
|
| CY7C1049L-25VM |
25ns, 512Kx8 static RAM (SRAM)
|
Cypress
|
| KM23V4000DETY KM23V4000DTY |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| EDI88257C EDI88257C/LP-C EDI88256C70CC EDI88256C70 |
70ns; 5V power supply; 256K x 18 monolithic SRAM
60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-HMSOP T&R
256Kx8 Monolithic SRAM(256Kx8 CMOS单片静态RAM（存取时0500ns
|
White Electronic Designs Corporation
|
| WS512K8L-20CM WS512K8L-20CQA WS512K8-XCX WS512K8-2 |
512K X 8 MULTI DEVICE SRAM MODULE, 45 ns, CDIP32
512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, CDIP32
512K X 8 MULTI DEVICE SRAM MODULE, 25 ns, CDIP32
512Kx8 SRAM MODULE, SMD 5962-92078
|
WEDC[White Electronic Designs Corporation]
|
| BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Asynchronous 4M(512Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
|
| EDI88512C_LP-C EDI88512C_LP-N EDI88512C/LP-N EDI88 |
100ns; 5V power supply; 512K x 8 monolithic SRAM CMOS
SRAM
60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R
|
White Electronic Designs
|
| EDI88257CA EDI88257CAXCC EDI88257CAXCM EDI88257LPA |
256Kx8 Monolithic SRAM
|
WEDC[White Electronic Designs Corporation]
|
