| PART |
Description |
Maker |
| WMS512K8BV-20E WMS512K8BV-17E WMS512K8BV-17DEMEA W |
20ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
17ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
15ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
512K X 8 STANDARD SRAM, 17 ns, CDSO32
512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间17ns
512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间20ns
|
White Electronic Designs Corporation
|
| WMS512K8LV-70CCE WMS512K8LV-85DEIE WMS512K8LV-85DE |
512Kx8 MONOLITHIC SRAM 512Kx8整装静态存储器
|
PMC-Sierra, Inc.
Pyramid Semiconductor, Corp.
|
| WMF512K8-70CLM5 WMF512K8-70CLI5 WMF512K8-150CM5A W |
512Kx8 MONOLITHIC FLASH, SMD 5962-96692
512Kx8 MONOLITHIC FLASH, SMD 5962-96692
|
White Electronic Design...
|
| EDI88128C100CB EDI88128C EDI88128LP EDI88128P EDI8 |
70ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
128K X 8 STATIC RAM CMOS MONOLITHIC
CAPACITOR 150UF 200V ELECT TSHA
128KX8 MONOLITHIC SRAM, SMD 5962-89598 128KX8整体式的SRAM，贴962-89598
CAPACITOR 560UF 200V ELECT TSHA 128KX8整体式的SRAM，贴962-89598
CAPACITOR 680UF 200V ELECT TSHA 128KX8整体式的SRAM，贴962-89598
CAPACITOR 270UF 200V ELECT TSHA 128KX8整体式的SRAM，贴962-89598
CAPACITOR 1200UF 200V ELECT TSHA
100ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
85ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
|
White Electronic Designs
N.A.
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| EDI816256CAXF44B EDI816256CAXF44C EDI816256CAXF44I |
256Kx16 MONOLITHIC SRAM, SMD 5962-96795
|
WEDC[White Electronic Designs Corporation]
|
| EDI88130LPSXCI EDI88130CSXFB EDI88130CSXCC EDI8813 |
128Kx8 Monolithic SRAM, SMD 5962-89598
|
WEDC[White Electronic Designs Corporation]
|
| WMS256K16-20DLIA WMS256K16-20FGC WMS256K16-20FLI W |
256Kx16 MONOLITHIC SRAM, SMD 5962-96902
|
White Electronic Design...
|
| EDI88130CSXNB EDI88130CSXCB EDI88130CSXTM EDI88130 |
128Kx8 Monolithic SRAM, SMD 5962-89598
|
http://
White Electronic Design...
|
| KM23V4000D |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM) 4分位512Kx8）的CMOS掩模ROM分位512Kx8）的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
| K6T4008C1C K6T4008C1C-B K6T4008C1C-DB55 K6T4008C1C |
512Kx8 bit Low Power CMOS Static RAM
512K X 8 STANDARD SRAM, 70 ns, PDIP32
512K X 8 STANDARD SRAM, 55 ns, PDSO32
512K X 8 STANDARD SRAM, 70 ns, PDSO32
512Kx8 bit Low Power CMOS Static RAM 512Kx8位低功耗CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
http://
|
| K6R4008C1C-C K6R4008C1C-C10 K6R4008C1C-C12 K6R4008 |
CMOS SRAM
512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges.
|
Samsung semiconductor
|
