| PART |
Description |
Maker |
| WED7FX325ZXEBSNYYC WED7F2325ZXEBSN90C WED7F2325ZXE |
2, 4, and 8MB, STmicro, 5.0V 4Mb Based, Uniform Sector FLASH Module Family
|
WEDC[White Electronic Designs Corporation]
|
| IBM0418A8ACLAB IBM0436A4ACLAB |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )寄存器锁存模式的同步CMOS静态RAM)
4Mb( 128K x 36 ) SRAM(4Mb( 128K x 36 )寄存器锁存模式的同步CMOS静态RAM) 4Mb的（128K的36）的SRAMMb的（128K的36）寄存器锁存模式的同步的CMOS静态RAM）的
|
IBM Microeletronics
International Business Machines, Corp.
|
| GS78116A |
8Mb Async SRAMs
|
GSI Technology
|
| GS78116B-10 GS78116B-10I GS78116B-12I GS78116B-15 |
512K x 16 8Mb Asynchronous SRAM
|
GSI Technology
|
| MT58L512L18P MT58L256L32P |
(MT58Lxxxx) 8Mb SYNCBURST SRAM
|
Micron Semiconductor
|
| IC61S25636T-133TQI IC61S25636T-200TQ IC61S25636T-2 |
8Mb SyncBurst Pipelined SRAM
|
Integrated Circuit Solu...
|
| GS881Z18T-11I GS881Z18T-66I GS881Z36T-80 |
8Mb Pipelined and Flow Through Synchronous NBT SRAMs 512K X 18 ZBT SRAM, 11 ns, PQFP100
8Mb Pipelined and Flow Through Synchronous NBT SRAMs 512K X 18 ZBT SRAM, 18 ns, PQFP100
8Mb Pipelined and Flow Through Synchronous NBT SRAMs 256K X 36 ZBT SRAM, 14 ns, PQFP100
|
GSI Technology, Inc.
|
| WCMC8016V9X-FI70 WCMC8016V9X |
8Mb (512K x 16) Pseudo Static RAM
|
WEIDA[Weida Semiconductor, Inc.]
|
| MT55L512L18F |
8Mb: 512K x 18,Flow-Through ZBT SRAM(8Mb流通式同步静态存储器)
|
Micron Technology, Inc.
|
| MT58L512L18F MT58L256L32F MT58L256V32F MT58L256V36 |
8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM
|
Micron Technology
|
| R1LV0808ASB-7SI R1LV0808ASB-5SI |
8Mb Advanced LPSRAM (1024k word x 8bit)
|
Renesas Electronics Corporation
|
